(PDF) MG200Q1US41 Datasheet - Silicon N Channel IGBT GTR Module

Número de pieza	MG200Q1US41
Descripción	Silicon N Channel IGBT GTR Module
Fabricantes	Toshiba
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No Preview Available ! TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE (sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal : M4/M6 / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC EIAJ TOSHIBA Weight: 465g ― ― 2-109A4A Rating 1200 ±20 200 400 200 400 1400 150 −40 ~ 125 2500 (AC, 1 min.) 2/3/3 Unit V V A A W °C °C V N·m 1 2001-04-16 1 page MG200Q1US41 5 2001-04-16 5 Page

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PDF MG200Q1US41 Data sheet ( Hoja de datos )