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Número de pieza | MG200Q1US51 | |
Descripción | Silicon N Channel IGBT GTR Module | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MG200Q1US51 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q1US51
MG200Q1US51
High Power Switching Applications
Motor Control Applications
Unit: mm
l High input impedance
l High speed : tf = 0.3µs (Max.)
@Inductive load
l Low saturation voltage
: VCE (sat) = 3.6V (Max.)
l Enhancement-mode
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 465g
Characteristic
Symbol
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward Current
DC
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCES
VGES
IC
(25°C / 80°C)
ICP
(25°C / 80°C)
IF
IFM
PC
Tj
Tstg
Isolation voltage
VIsol
Screw torque (Terminal : M4/M6/mounting)
―
Rating
1200
±20
300 / 200
600 / 400
200
400
1500
150
−40 ~ 125
2500
(AC 1 min.)
2/3/3
Unit
V
V
A
A
W
°C
°C
V
N·m
―
―
2-109F1A
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
2001-02-22 1/6
1 page MG200Q1US51
2001-02-22 5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MG200Q1US51.PDF ] |
Número de pieza | Descripción | Fabricantes |
MG200Q1US51 | Silicon N Channel IGBT GTR Module | Toshiba |
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