(PDF) MG200Q1ZS40 Datasheet - Silicon N Channel IGBT GTR Module

Número de pieza	MG200Q1ZS40
Descripción	Silicon N Channel IGBT GTR Module
Fabricantes	Toshiba
Logotipo
Hay una vista previa y un enlace de descarga de MG200Q1ZS40 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas
No Preview Available ! TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 MG200Q1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES VR IC ICP IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 1200 200 400 200 400 1300 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V V A A W °C °C V N·m ― ― 2-109C2A 1 2001-08-16 1 page MG200Q1ZS40 5 2001-08-16 5 Page

Páginas	Total 6 Páginas
PDF Descargar	[ Datasheet MG200Q1ZS40.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF MG200Q1ZS40 Data sheet ( Hoja de datos )