(PDF) MG200Q2YS50 Datasheet - Silicon N Channel IGBT GTR Module

Número de pieza	MG200Q2YS50
Descripción	Silicon N Channel IGBT GTR Module
Fabricantes	Toshiba
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No Preview Available ! TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l Includes a complate half bridge in one ackage. l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC (25°C / 80°C) ICP (25°C / 80°C) IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 300/200 600/400 200 400 1400 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V A A W °C °C V N·m ― ― 2-109C4A 1 2001-04-16 1 page MG200Q2YS50 5 2001-04-16 5 Page

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PDF MG200Q2YS50 Data sheet ( Hoja de datos )