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PDF MG800J2YS50A Data sheet ( Hoja de datos )
| Número de pieza | MG800J2YS50A | |
| Descripción | TOSHIBA IGBT Module Silicon N Channel IGBT | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MG800J2YS50A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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MG800J2YS50A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG800J2YS50A
High power switching applications
Motor control applications
Unit: mm
· The electrodes are isolated from case.
· Enhancement-mode
· Thermal output terminal (TH)
Equivalent Circuit
TH1 Ｃ1
TH2
G1
Fo1
E1 E1/C2
JEDEC
JEITA
G2
Fo2 TOSHIBA
E2 Weight: 680 g (typ.)
E2
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
Forward current
DC
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal: M8
Mounting: M5
Symbol
VCES
VGES
IC
IF
PC
Tj
Tstg
VIsol
¾
¾
Rating
600
±20
800
800
2900
150
-40~125
2500
(AC 1 min)
10
3
Unit
V
V
A
A
W
°C
°C
V
N･m
N･m
―
―
2-126A1A
1 2002-10-31
1 page  
10000
Switching time – IC
1000
td (on)
toff
ton
td (on)
tr
100
tf
Common emitter
VCC = 300 V
VGE = ±15 V
Tj = 25°C
RG = 4.7 W
Tj = 125°C
10
0 100 200 300 400 500 600 700 800 900
Collector current IC (A)
1000
100
trr, Irr – IF
trr
Irr
10
Common cathode
di/dt = 2000 A/ms
VGE = ±15 V
Tj = 25°C
VCC = 300 V
Tj = 125°C
1
0 200 400 600 800
Forward current IF (A)
MG800J2YS50A
Switching loss – IC
100
Eoff
50
30
Eon
10
5
3 Common emitter
VCC = 300 V
VGE = ±15 V
Tj = 25°C
RG = 4.7 W
Tj = 125°C
1
0 100 200 300 400 500 600 700 800 900
Collector current IC (A)
1000
100
Common cathode
di/dt = 2000 A/ms
VGE = -10 V
VCC = 300 V
Edsw – IF
Tj = 25°C
Tj = 125°C
10
1
0 200 400 600 800
Forward current IF (A)
5 2002-10-31
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MG800J2YS50A.PDF ] | |
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| MG800J2YS50A | TOSHIBA IGBT Module Silicon N Channel IGBT | Toshiba |
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