(PDF) MG90V2YS40 Datasheet - Silicon N Channel IGBT GTR Module

Número de pieza	MG90V2YS40
Descripción	Silicon N Channel IGBT GTR Module
Fabricantes	Toshiba
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No Preview Available ! TOSHIBA GTR Module Silicon N Channel IGBT MG90V2YS40 High Power Switching Applications Motor Control Applications MG90V2YS40 Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 1.5µs (max) (IC = 90A) trr = 0.3µs (max) (IF = 90A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Weight: 430g (typ.) Rating 1700 ±20 90 180 90 180 1100 150 −40 ~ 125 4000 (AC 1minute) 3/3 Unit V V A A W °C °C V N·m ― ― 2-109C1A 1 2001-08-16 1 page MG90V2YS40 5 2001-08-16 5 Page

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PDF MG90V2YS40 Data sheet ( Hoja de datos )