Datasheet.kr   

MGA-86576-STR 데이터시트 PDF




Agilent(Hewlett-Packard)에서 제조한 전자 부품 MGA-86576-STR은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MGA-86576-STR 자료 제공

부품번호 MGA-86576-STR 기능
기능 1.5 - 8 GHz Low Noise GaAs MMIC Amplifier
제조업체 Agilent(Hewlett-Packard)
로고 Agilent(Hewlett-Packard) 로고


MGA-86576-STR 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 6 페이지수

미리보기를 사용할 수 없습니다

MGA-86576-STR 데이터시트, 핀배열, 회로
1.5 – 8 GHz Low Noise GaAs
MMIC Amplifier
Technical Data
MGA-86576
Features
• 1.6 dB Noise Figure at 4 GHz
• 23 dB Gain at 4 GHz
• +6 dBm P1dB at 4 GHz
• Single +5 V Bias Supply
Applications
• LNA or Gain Stage for 2.4
GHz and 5.7 GHz ISM Bands
• Front End Amplifier for GPS
Receivers
• LNA or Gain Stage for PCN
and MMDS Applications
• C-Band Satellite Receivers
• Broadband Amplifier for
Instrumentation
Schematic Diagram
RF
INPUT
1
Surface Mount Ceramic
Package
Pin Connections
4 GROUND
RF INPUT
1
RF OUTPUT
AND Vd
3
2 GROUND
RF OUTPUT
AND Vd
3
Description
Hewlett-Packard’s MGA-86576 is
an economical, easy-to-use GaAs
MMIC amplifier that offers low
noise and excellent gain for
applications from 1.5 to 8 GHz.
The MGA-86576 may be used
without impedance matching as a
high performance 2 dB NF gain
block. Alternatively, with the
addition of a simple series
inductor at the input, the device
noise figure can be reduced to
1.6␣ dB at 4 GHz.
The circuit uses state-of-the-art
PHEMT technology with self-
biasing current sources, a source-
follower interstage, resistive
feedback, and on chip impedance
matching networks.
A patented, on-chip active bias
circuit allows operation from a
single +5 V power supply. Current
consumption is only 16 mA.
These devices are 100% RF tested
to assure consistent performance.
GROUND 2
GROUND 4
5965-9687E
6-228




MGA-86576-STR pdf, 반도체, 판매, 대치품
MGA-86576 Typical Noise Parameters[3],
TC = 25°C, Zo = 50 , Vd = 5 V
Frequency
GHz
NFo
dB
Γopt
Mag.
Ang.
1.0
2.1 0.56
27
1.5
1.6 0.54
31
2.5
1.5 0.47
40
4.0
1.6 0.38
54
6.0
1.8 0.28
77
8.0
2.1 0.22
107
[3]Reference plane taken at point where leads meet body of package.
RN/50
0.43
0.40
0.36
0.32
0.28
0.25
MGA-86576 Applications
Information
Introduction
The MGA-86576 is a high gain,
broad band, low noise amplifier.
The use of plated through holes or
an equivalent minimal inductance
grounding technique placed
precisely under each ground lead
at the device is highly recom-
mended. A minimum of two
plated through holes under each
ground lead is preferred with four
being highly suggested. A long
ground path to pins 2 and 4 will
add additional inductance which
can cause gain peaking in the 2 to
4 GHz frequency range. This can
also be accompanied by a
decrease in stability. A suggested
layout is shown in Figure 7. The
circuit is designed for use on
0.031 inch thick FR-4/G-10 epoxy
glass dielectric material.
Printed circuit board thickness is
also a major consideration.
Thicker printed circuit boards
dictate longer plated through
holes which provide greater
undesired inductance. The para-
sitic inductance associated with a
pair of plated through holes
passing through 0.031 inch thick
printed circuit board is
approximately 0.1 nH, while the
inductance of a pair of plated
through holes passing through
0.062 inch thick board is about
0.2␣ nH. Hewlett-Packard does not
recommend using the MGA-86576
MMIC on boards thicker than
0.040 inch.
The effects of inductance asso-
ciated with the board material are
easily analyzed and very predict-
able. As a minimum, the circuit
simulation should consist of the
data sheet S-Parameters and an
additional circuit file describing
the plated through holes and any
additional inductance associated
with lead length between the
device and the start of the plated
through hole. To obtain a
complete analysis of the entire
amplifier circuit, the effects of the
input and output microstriplines
and bias decoupling circuits
should be incorporated into the
circuit file.
Device Connections Vd and RF
Output (Pin 3)
RF and DC connections are
shown in Figure 8. DC power is
provided to the MMIC through the
same pin used to obtain RF
output. A 50 microstripline is
used to connect the device to the
following stage or output
connector. A bias decoupling
network is used to feed in Vdd
C1
100-1000 pF
Vdd
HIGH Z
27 pF
50
50
L1 1
R1 10-100
4
3
2
27 pF
50
50
Figure 7. Layout for MGA-86576
Demonstration Amplifier. PCB
dimensions are 1.18 inches wide by
1.30 inches high.
Figure 8. Demonstration Amplifier Schematic.
6-231

4페이지












구       성 총 6 페이지수
다운로드[ MGA-86576-STR.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MGA-86576-STR

1.5 - 8 GHz Low Noise GaAs MMIC Amplifier

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵