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PDF MGB15N35CLT4 Data sheet ( Hoja de datos )
| Número de pieza | MGB15N35CLT4 | |
| Descripción | Internally Clamped N-Channel IGBT | |
| Fabricantes | ON | |
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MGP15N35CL,
MGB15N35CL,
MGC15N35CL
Internally Clamped
N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Gate–Emitter ESD Protection
• Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Collector Current–Continuous
@ TC = 25°C
VCES
VCER
VGE
IC
380
380
22
15
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD 136
1.0
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
Unit
VDC
VDC
VDC
ADC
Watts
W/°C
°C
http://onsemi.com
N–CHANNEL IGBT
15 A, 350 V
VCE(on) = 1.8 V MAX
C
G RG
RGE
E
MARKING
DIAGRAMS
G
CE
TO–220
CASE 221A
STYLE 9
GP15N35CL
ALYYWW
D2PAK
CASE 418B
STYLE 3
GB15N35CL
ALYYWW
© Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 0
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MGP15N35CL
TO–220
50 Units/Rail
MGB15N35CLT4 D2PAK 800 Tape & Reel
MGC15N35CL Die Options Not Applicable
1 Publication Order Number:
MGP15N35CL/D
1 page  
MGP15N35CL, MGB15N35CL, MGC15N35CL
20
18 VCC = 300 V
16
VGE = 5.0 V
Tj = 25°C
14 IC = 10 A
12 L = 300 µH
td(off)
10
8 tf
6
4
2
0
250 500 750
RG, GATE RESISTANCE (OHMS)
1000
Figure 7. Switching Speed versus Gate Resistance
20
18
16
14
12
10
8
6
4
2
0
250
td(off)
tf
VCC = 300 V
VGE = 5.0 V
Tj = 150°C
IC = 10 A
L = 300 µH
500 750 1000
RG, GATE RESISTANCE (OHMS)
Figure 8. Switching Speed versus Gate Resistance
20
18
VCC = 300 V
VGE = 5.0 V
16 RG = 1000 Ω
14
IC = 10 A
L = 300 µH
12
10
8
6
4
2
0
–50 –25
0
25
td(off)
tf
50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 9. Switching Speed versus Case Temperature
20
18
16 td(off)
14
12
10
8
6
VCC = 300 V
VGE = 5.0 V
4 RG = 1000 Ω
2 Tj = 150°C
L = 300 µH
0
02 46
tf
8 10 12 14 16
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Total Switching Losses
versus Collector Current
30
25
25°C
20
150°C
15
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
10
5
0
0 1 2 3 4 5 6 7 8 9 10
INDUCTOR (mH)
Figure 11. Latch Current versus Inductor (Typical)
20
18 3.0 mH
16
14
6.0 mH
12
10
8
6 VCC = 50 V
4
VGE = 5.0 V
RG = 1000 Ω
2
0
0 25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 12. Latch Current versus Temperature (Typical)
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MGB15N35CLT4.PDF ] | |
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