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부품번호 | MGB15N40CLT4 기능 |
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기능 | Internally Clamped N-Channel IGBT | ||
제조업체 | ON | ||
로고 | |||
전체 8 페이지수
MGP15N40CL,
MGB15N40CL,
MGC15N40CL
Internally Clamped
N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Gate–Emitter ESD Protection
• Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Collector Current–Continuous
@ TC = 25°C
VCES
VCER
VGE
IC
440
440
22
15
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD 136
1.0
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
Unit
VDC
VDC
VDC
ADC
Watts
W/°C
°C
http://onsemi.com
N–CHANNEL IGBT
15 A, 410 V
VCE(on) = 1.8 V MAX
C
G RG
RGE
E
MARKING
DIAGRAMS
G
CE
TO–220
CASE 221A
STYLE 9
GP15N40CL
ALYYWW
D2PAK
CASE 418B
STYLE 3
GB15N40CL
ALYYWW
© Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 1
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MGP15N40CL
TO–220
50 Units/Rail
MGB15N40CLT4 D2PAK 800 Tape & Reel
MGC15N40CL Die Options Not Applicable
1 Publication Order Number:
MGP15N40CL/D
MGP15N40CL, MGB15N40CL, MGC15N40CL
45
40 VGE = 10.0 V
35 VGE = 5.0 V
VGE = 4.0 V
30
25
20 VGE = 3.0 V
15
10
5 Tj = 25°C
0
0 1 2 34 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
45
40 VGE = 10.0 V
35 VGE = 5.0 V
30
VGE = 4.0 V
25
20 VGE = 3.0 V
15
10
5 Tj = 150°C
0
0 1 2 34 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
30
VCE = 10 V
25
20
15
Tj = 150°C
10
Tj = 25°C
Tj = 40°C
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
2.0
1.8 IC = 15 A
1.5 IC = 10 A
1.3 IC = 5 A
1.0
0.8
0.5 VGE = 15 V
0.3
0.0
–50 –25
0
25 50 75 100 125 150
Tj, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–to–Emitter Saturation Voltage
versus Junction Temperature
10000
1000 CISS
100 COSS
10
CRSS
1
0 20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
2.5
2.0 Mean + 4 σ
Mean
1.5 Mean – 4 σ
1.0
IC = 1 mA
0.5
0.0
–50 –25
0 25 50 75 100 125 150
TEMPERATURE (°C)
Figure 6. Threshold Voltage versus Temperature
http://onsemi.com
4
4페이지 Notes
MGP15N40CL, MGB15N40CL, MGC15N40CL
http://onsemi.com
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ MGB15N40CLT4.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MGB15N40CLT4 | Internally Clamped N-Channel IGBT | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |