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PDF MGF0919A Data sheet ( Hoja de datos )
| Número de pieza | MGF0919A | |
| Descripción | L & S BAND GaAs FET [ SMD non matched ] | |
| Fabricantes | Mitsubishi | |
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MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
• High power gain
Gp=19dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=300mA • Rg=500Ω
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID Drain current
800
IGR Reverse gate current
-2.4
IGF Forward gate current
10
PT Total power dissipation
6
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
mA
mA
mA
W
°C
°C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VGS(off) Gate to source cut-off voltage
gm Transconductance
Po Output power
ηadd
Power added Efficiency
GLP
Linear Power Gain
NF Noise figure
Rth(ch-c) Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=2.0 m A
VDS=3V,ID=300m A
VDS=10V,ID=300mA,f=1.9GHz
Pin=12dBm
VDS=10V,ID=300mA,f=1.9GHz
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min. Typ. Max.
- 600 800
-1.0 - -5.0
- 260 -
28 30
-
- 37 -
17 19
-
- 1.2 -
- 17 25
Unit
mA
V
mS
dBm
%
dB
dB
°C/W
Mitsubishi Electric
June/2004
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MGF0919A.PDF ] | |
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