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PDF MGF1601B Data sheet ( Hoja de datos )
| Número de pieza | MGF1601B | |
| Descripción | MICROWAVE POWER GaAs FET | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1601B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
FEATURES
• High output power at 1dB gain compression
P1dB=21.8dBm(TYP.) @f=8GHz
• High linear power gain
GLP=8dB(TYP.)
@f=8GHz
APPLICATION
S to X band medium-power amplifiers and oscillators.
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=6V
• ID=100mA
• Refer to Bias Procedure
OUTLINE DRAWING
4MIN.
1
Unit:millimeters
4MIN.
0.5±0.15
22
0.5±0.15
3
2.5±0.2
GD-10
1 GATE
2 SOURCE
3 DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
VGDO
VGSO
Gate to drain voltage
Gate to source voltage
-8
-8
ID Drain current
250
IGR Reverse gate current
-0.6
IGF Forward gate current
1.5
PT Total power dissipation *1
1.2
Tch Channel temperature
175
Tstg Storage temperature
*1:TC=25˚C
-65 to +175
Unit
V
V
mA
mA
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
V(BR)GDO Gate to drain breakdown voltage IG=-200µA
V(BR)GSO Gate to source breakdown voltage IG=-200µA
IGSS Gate to source leakage current VGS=-3V,VDS=0V
IDSS
VGS(off)
gm
Saturated drain current
Gate source cut-off voltage
Transconductance
VGS=0V,VDS=3V
VDS=3V,ID=100µA
VDS=3V,ID=100mA
GLP Linear power gain
VDS=6V,ID=100mA,f=8GHz
P1dB
Output power at 1dB gain
compression
VDS=6V,ID=100mA,f=8GHz
Rth(ch-c) Thermal resistance
*1:Channel to ambient
*1 ∆Vf method
Min
-8
-8
–
150
-1.5
70
6
20.8
–
Limits
Typ
–
–
–
200
–
90
8
21.8
–
Max
–
–
20
250
-4.5
–
–
–
125
Unit
V
V
µA
mA
V
mS
dB
dBm
˚C/W
Nov. ´97
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MGF1601B.PDF ] | |
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