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Número de pieza | MGF1801 | |
Descripción | TAPE CARRIER MICROWAVE POWER GaAs FET | |
Fabricantes | Mitsubishi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MGF1801 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
FEATURES
• High output power at 1dB gain compression
P1dB=23dBm(TYP.)
@f=8GHz
• High linear power gain
GLP=9dB(TYP.)
@f=8GHz
• High reliability and stability
APPLICATION
S to X band medium-power amplifiers and oscillators.
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=6V
• ID=100mA
• Refer to Bias Procedure
OUTLINE DRAWING
4MIN.
2
GD-10
Unit:millimeters
4MIN.
1
0.5±0.15
2
0.5±0.15
3
2.5±0.2
1 GATE
2 SOURCE
3 DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
VGDO
VGSO
ID
IGR
IGF
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Ratings
-8
-8
250
-0.6
1.5
PT
Tch
Tstg
*1:TC=25˚C
Total power dissipation
Channel temperature
Storage temperature
*1
1.2
175
-65 to +175
Unit
V
V
mA
mA
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
V(BR)GDO Gate to drain breakdown voltage IG=-200µA
V(BR)GSO Gate to source breakdown voltage IG=-200µA
IGSS Gate to source leakage current VGS=-3V,VDS=0V
IDSS Saturated drain current
VGS=0V,VDS=3V
VGS(off) Gate source cut-off voltage
gm Transconductance
VDS=3V,ID=100µA
VDS=3V,ID=100mA
GLP Linear power gain
VDS=6V,ID=100mA,f=8GHz
P1dB
Output power at 1dB gain
compression
VDS=6V,ID=100mA,f=8GHz
Rth(ch-c) Thermal resistance
*1:Channel to ambient
*1 ∆Vf method
Limits
Min Typ Max
-8 – –
-8 –
–
– – 20
150 200 250
-1.5 – -4.5
70 90
–
7 9–
Unit
V
V
µA
mA
V
mS
dB
21.8 23.0 – dBm
– – 125 ˚C/W
Nov. ´97
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MGF1801.PDF ] |
Número de pieza | Descripción | Fabricantes |
MGF1801 | MICROWAVE POWER GaAs FET | Mitsubishi |
MGF1801 | TAPE CARRIER MICROWAVE POWER GaAs FET | Mitsubishi |
MGF1801B | MICROWAVE POWER GaAs FET | Mitsubishi |
MGF1801BT | TAPE CARRIER MICROWAVE POWER GaAs FET | Mitsubishi |
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