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PDF MGF4714CP Data sheet ( Hoja de datos )
| Número de pieza | MGF4714CP | |
| Descripción | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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MITSUBISHI SEMICONDUCTOR GaAs FET
MGF4714CP
PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4714CP low-noise HEMT(High Electron Mobility
Transistor) is designed for use in L to Ku band amplifiers.
The plastic mold package offer high cost performance, and has a
configuration suitable for microstrip circuits.
The MGF4714CP is mounted in Super 12 tape.
FEATURES
• Low noise figure
NFmin.=1.00dB(MAX.)
• High associated gain
Gs=11.0dB(MIN.)
@f=12GHz
@f=12GHz
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=2V,ID=10mA
• Refer to Bias Procedure
OUTLINE DRAWING
(0.6)
1
Unit:millimeters
2
2
(ø1.2)
3
0.5±0.1
2.2±0.2
(8˚)
(R0.1) (R0.1)
4.0±0.3
GD-22
1 Gate
2 Source
3 Drain
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
VGDO Gate to drain voltage
-4
VGSO
ID
Gate to source voltage
Drain current
-4
60
PT Total power dissipation
50
Tch Channel temperature
Tstg Storage temperature
125
-65 to +125
Unit
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
V(BR)GDO
IGSS
IDSS
VGS(off)
gm
GS
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,ID=10mA
f=12GHz
Limits
Min Typ Max
-3 – –
– – 50
15 – 60
-0.1 – -1.5
– 55 –
11.0 –
–
– – 1.00
Unit
V
µA
mA
V
mS
dB
dB
Nov. ´97
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MGF4714CP.PDF ] | |
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