|
|
PDF MGF7169C Data sheet ( Hoja de datos )
| Número de pieza | MGF7169C | |
| Descripción | UHF BAND GaAs POWER AMPLIFIER | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MGF7169C (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
|
No Preview Available !
Technical Note
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
Specifications are subject to change without notice.
DESCRIPTION
The MGF7169C is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
FEATURES
Low voltage operation :
Vd=3.0V
High output power :
Po=28dBm typ. @f=1.85~1.91GHz
Low distortion :
ACP=-46dBc max. @Po=28dBm
High efficiency :
Id=520mA typ. @Po=28dBm
Small size :
7.0 x 6.1 x 1.1 mm
Surface mount package
2 Stage Amplifier
External matching circuit is required
APPLICATION
1.9GHz band handheld phone
QUALITY GRADE
GG
PIN CONFIGURATION
(TOP VIEW)
Pi
GND
Vg1
Vd1 GND
MC
Vd2 / Po
Vg2
Pi : RF input
Po : RF output
Vd1 : Drain bias 1
Vd2 : Drain bias 2
Vg : Gate bias
MC : Note1
GND : Connect to GND
CASE: Connect to GND
Note1:Connect to matching circuit
Block Diagram of this IC and Application Circuit Example.
Regulator
Battery
Pout
VD2
Matching
circuit
VD1
MGF7169C
HPA
VG1
VG2
Negative voltage
generator
VDD
Matching
circuit
Pin
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MITSUBISHI ELECTRIC
(1/20)
Aug. '97
1 page  
Preliminary
information
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
Spectral Plot of CDMA
ACPR=-32.31dBc
Harmonics
2SP=-53.3dBc
3SP=-31.3dBc
MITSUBISHI ELECTRIC
(5/20)
Fin=1880MHz
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
Pout=28dBm
CDMA evaluation
Aug. '97
5 Page 
Preliminary
information
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
Equivalent Circuit of Test Board for CDMA(1.85-1.91GHz)
l=8.0
w=1.0
Pin
l=8.5
w=1.0
l=2.0
1.5pF w=1.0
2.5pF
MGF
7169C
Vd2
1000pF
l=23.5
w=0.5
l=2.0
w=2.2
4.0pF
l=11.0
w=1.0
4.5pF
Pout
Unit:mm
SUB. data
Er=4.8
H=600 mm
Metal T=43 mm
MITSUBISHI ELECTRIC
(11/20)
Aug. '97
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet MGF7169C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MGF7169C | UHF BAND GaAs POWER AMPLIFIER | Mitsubishi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |