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PDF MGFC45V6472A Data sheet ( Hoja de datos )
| Número de pieza | MGFC45V6472A | |
| Descripción | 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET | |
| Fabricantes | Mitsubishi | |
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PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
27-March'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
DESCRIPTION
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
.
The MGFC45V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4-7.2
OUTLINE DRAWING Unit:millimeters (inches)
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
24 +/- 0.3
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
High power gain
GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
High power added efficiency
PAE = 28 % (TYP.) @ f=6.4-7.2GHz
(1) 0.6 +/- 0.15
R1.2
(2)
Low distortion [item -51]
IM3=-42dBc(min.) @Po=34.5dBm S.C.L.
Thermal Resistance
Rth(ch-c)=1.0 deg.C/W(MAX.)
(3)
20.4 +/- 0.2
APPLICATION
item 01 : 6.4-7.2 GHz band power amplifier
16.7
item 51 : 6.4-7.2 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10V
ID = 8.0 A
RG=25 ohm
GF-38
(1) GATE
(2) SOURCE(FIANGE)
(3) DRAIN
ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg.C)
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID Drain current
IGR Reverse gate current
IGF Forward gate current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25 deg.C
Ratings
-15
-15
30
-60
126
125
175
-65/+175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
ELECTRICAL CARACTERISTICS
Symbol
Parameter
(Ta=25 deg.C)
Test conditions
Min.
IDSS Saturated drain current
VDS=3V, VGS=0V
-
Gm Transconductance
VDS=3V, ID=6.4A
-
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP Linear power gain
VDS = 3V , ID = 120mA
VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz
-
44.5
7
PAE Power added efficiency
-
IM3 3rd order IM distortion *1
-42
Rth(ch-c) Thermal resistance
*2
Delta Vf method
-
*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
Limits
Typ.
20
8.0
-
45
8
35
-45
-
Max.
-
Unit
A
-V
-5 V
- dBm
- dB
-%
- dBc
1.0 deg.C/W
MITSUBISHI
ELECTRIC
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