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PDF MGFC5107 Data sheet ( Hoja de datos )

Número de pieza MGFC5107
Descripción Ka-Band 3-Stage Self Bias Low Noise Amplifier
Fabricantes Mitsubishi 
Logotipo Mitsubishi Logotipo



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PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5107
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DESCRIPTION
The MGFC5107 is a GaAs MMIC chip
especially designed for 21.0 ~ 24.0 GHz band
Low Noise Amplifier.(LNA) .
FEATURES
RF frequency : 21.0 to 24.0 GHz
Super Low Noise NF=2.5dB (TYP.)
Single voltage operation
BLOCK DIAGRAM
Vd1 Vd2 Vd3
In Out
Vg1 Vg2 Vg3
PHOTOGRAPH
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Vd Drain bias voltage
Parameter
Id Drain bias current
Vg Gate bias voltage
Pin Maximum peak input power overdrive (Duration < 1sec)
Ta Operating temperature range
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol
Fop
Gain
Delta gain
NF
VSWR in
VSWR out
P1dB
Output IP3
Vd
Id
Vg
Parameter
Test conditions
Operating frequency
range
Small signal gain
Small signal gain flatness
Noise figure
On-wafer
measurement
Input VSWR
Output VSWR
Output power at 1 dB
compression
Output power at 3rd-
order intercept point
Drain bias voltage
Drain bias current
Gate bias voltage
Freq=22GHz
Vd=5V,Id=30mA
MITSUBISHI
ELECTRIC
Values
5
30
-
TBD
TBD
Unit
V
mA
V
dBm
˚C
Limits
Min. Typ. Max. Unit
21.0
17.0 18.0
1.5
2.5
(5)
TBD
(17)
TBD
5
30
No need
24.0
3.5
2.0:1
2.0:1
GHz
dB
dB
dB
dBm
dBm
V
mA
V
as of July '98

1 page




MGFC5107 pdf
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5107
Ka-Band 3-Stage Self Bias Low Noise Amplifier
AN EXAMPLE OF TEST CIRCUIT
2.5V
2.5V
2.5V
Cb Cb
Cb :Chip capacitor (39pF)
Cb > 100µF
Vd1a Vd1b
Vd2a Vd2b
Vd3a Vd3b
GND GND
GND
RF-in
GND
Vg1
GND
RF-out
GND
Vg2 Vg3
*1
*2
*1 Length of bonding wire < 200 µm
*2 Number of bonding wire 3
*1
*2
MITSUBISHI
ELECTRIC
as of July '98

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