(PDF) MGFC5214 Datasheet - Q-Band 2-Stage Power Amplifier

Número de pieza	MGFC5214
Descripción	Q-Band 2-Stage Power Amplifier
Fabricantes	Mitsubishi
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No Preview Available ! PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. DESCRIPTION The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band High Power Amplifier (HPA) . MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5214 Q-Band 2-Stage Power Amplifier BLOCK DIAGRAM GND Vg1 Vd1 Vg2 Vd2 FEATURES RF frequency : 37.0 to 43.0 GHz Linear gain : 12 dB (TYP.)@ 37 to 40 GHz 10 dB(TYP.) @ 40 to 43 GHz P1dB : ≥ 23 dBm(min.) @ 37 to 40 GHz ≥ 23 dBm(target) @ 40 to 43 GHz RFin RFout TARGET SPECIFICATIONS (Ta=25˚C) Parameter Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size Min. Typical Max. 37 40 12 23 2.0 2.0 Vd1=4.5, Vd2=6 -0.2 1.99x1.60 Unit GHz dB dBm V V mm2 Parameter Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size Min. Typical Max. 40 43 10 (23) 2.2 2.3 Vd1=4.5, Vd2=6 -0.2 1.99x1.60 Unit GHz dB dBm V V mm2 GND (Vg1) Vd1 Vg2 Vd2 PHOTOGRAPH MITSUBISHI ELECTRIC as of July '98 1 page

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PDF MGFC5214 Data sheet ( Hoja de datos )