(PDF) MGFC5218 Datasheet - K-Band 2-Stage Power Amplifier

Número de pieza	MGFC5218
Descripción	K-Band 2-Stage Power Amplifier
Fabricantes	Mitsubishi
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No Preview Available ! PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5218 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5218 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band High Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 Vg2 Vd1 Vd2 FEATURES RF frequency : 18.0 to 19.0 GHz P1dB : ≥ 29.0 dBm(min.) @ 18.0 to 19.0 GHz In Vd1 Out Vg1 Vg2 Vd1 Vd2 Chip size: 1940 µm x 2000 µm TARGET SPECIFICATIONS (Ta=25˚C) Symbol IDSS1 IDSS2 Vp1 Vp2 Parameter Drain Saturation Current Drain Saturation Current Pinch Off Voltage Pinch Off Voltage P1dB Output Power at 1 dB Compression Point Gain Gain Input Return Loss Input Return Loss Output Return Loss Output Return Loss IM3 Inter Modulation Level Test Conditions Vd=3.0V Vd=3.0V,Id=0.6mA Vd=3.0V,Id=1.2mA f=18 - 20 GHz, Vd1=Vd2=6.0V , Id1=360mA, Id2=720mA f=18 - 20 GHz, Vd1=Vd2=6.0V , Id1=360mA, Id2=720mA Pout=TBD *:Ids at RF off Min. -2.0 -2.0 29.0 TBD Limits Typ. 720 1440 15.0 8.0 8.0 Max. -1.0 -1.0 Unit mA mA V V dBm dB dB dB dBc MITSUBISHI ELECTRIC as of July '98 1 page

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