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부품번호 | 74V2G66 기능 |
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기능 | DUAL BILATERAL SWITCH | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 8 페이지수
® 74V2G66
s HIGH SPEED:
tPD = 0.3 ns (TYP.) at VCC = 5V
tPD = 0.4 ns (TYP.) at VCC = 3.3V
s LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 25 oC
s LOW ”ON” RESISTANCE:
RON = 10Ω (TYP.) AT VCC = 5.0V II/O=100µA
RON = 12Ω (TYP.) AT VCC = 3.3V II/O=100µA
s SINE WAVE DISTORTION
0.04% (TYP.) AT VCC=3.3V f=1KHz
s WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 5V
DESCRIPTION
The 74V2G66 is an high-speed CMOS DUAL
BILATERAL SWITCH fabricated in silicon gate
C2MOS technology. It achieves high speed
propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This feature makes this part
ideal for battery-powered equipment. This
bilateral switch handles rail to rail analog and
digital signals that may vary across the full
DUAL BILATERAL SWITCH
PRELIMINARY DATA
SOT23-8L
PACKAGE
SOT23-8L
ORDER CODES
T UB E
T&R
74V2G66STR
power-supply range (from Vcc to Ground).
The C input is provided to control the switch and
it’s compatible with standard CMOS output; the
switch is ON when the C input is held high and off
when C is held low. It can be used in many
application as Battery Powered System, Audio
Signal Routing, Communications System, Test
Equipment. It’s available in the commercial
temperature range in SOT23-8L.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2000
1/8
74V2G66
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf =3 ns)
Symb ol
Parameter
tPD Delay Time
tPZL Output Enable Time
tPZH
tPLZ Output Disable Time
tPHZ
Test Condition
V CC
( V)
3.3(*)
5.0(**)
3.3(*)
5.0(**)
3.3(*)
5.0(**)
tr = tf =6ns
RL = 1kΩ
RL = 500Ω
Value
TA = 25 oC
Min. Typ. Max.
0.4 0.8
0.3 0.6
2.5 4.0
2.0 4.0
5.0 7.5
5.0 7.5
-40 to 85 oC
Min . Max.
1.2
1.0
5.0
5.0
9.0
9.0
Unit
ns
ns
ns
CIN Input Capacitance
CI/O Switch Terminal
Capacitance
5 pF
10 pF
CPD Power Dissipation
Capacitance (note 1)
3.3
5.0
2.5 pF
3
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/2 (switch).
(*) Voltage range is 3.3V ± 0.3V
(**) Voltagerange is 5V ± 0.5V
ANALOG SWITCH CHARACTERISTICS (GND = 0 V, TA = 25oC)
Symb ol
Parameter
Sine Wave Distortion
(THD)
fMAX Frequency Response
(Switch ON)
Feedthrough
Att enuati on
(Switch OFF)
Crosstalk (Control
Input to Signal Output)
Crosstalk (Between
Switches)
(*) Voltage range is 5V ± 0.5V
V CC
(V)
3.3
5.0(*)
3.3
5.0(*)
3.3
5.0(*)
3.3
5.0(*)
3.3
5.0(*)
Test Co nditi on
Value
VIN
(Vp-p)
2.75
4
fIN = 1 KHz RL = 10KΩ CL = 50 pF
0.04
0.04
Adjust fIN voltage to Obt ain 0dBm at VOS.
Increase fIN Frequency until dB Meter reads -3dB
RL = 50Ω, CL = 10pF
150
180
VIN is centered at VCC/2.
Adjust fIN voltage to obtain 0dBm at VIS
RL = 600Ω, CL = 50pF, fIN = 1MHz sine wave
-60
-60
RL = 600Ω, CL = 50pF, fIN = 1MHz square wave
tr = tf = 6ns
60
60
RL = 600Ω, CL = 50pF, fIN = 1MHz sine wave
-60
-60
Un it
%
MHz
dB
mV
dB
4/8
4페이지 DIM.
A
A1
A2
b
C
D
E
E1
L
e
e1
74V2G66
SOT23-8L MECHANICAL DATA
MIN.
0.90
0.00
0.90
0.22
0.09
2.80
2.60
1.50
0.35
mm
TYP.
0.65
1.95
MAX.
1.45
0.15
1.30
0.38
0.20
3.00
3.00
1.75
0.55
MIN.
35.4
0.0
35.4
8.6
3.5
110.2
102.3
59.0
13.8
mils
TYP.
25.6
76.7
MAX.
57.1
5.9
51.2
14.9
7.8
118.1
118.1
68.8
21.6
7/8
7페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
74V2G66 | DUAL BILATERAL SWITCH | STMicroelectronics |
74V2G66STR | DUAL BILATERAL SWITCH | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |