(PDF) MCL4151 Datasheet - Silicon Epitaxial Planar Diode

Número de pieza	MCL4151
Descripción	Silicon Epitaxial Planar Diode
Fabricantes	Vishay Telefunken
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No Preview Available ! Silicon Epitaxial Planar Diode Features D Electrical data identical with the device 1N4151 D Micro Melf package MCL4151 Vishay Telefunken Applications Extreme fast switches 96 12315 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current Forward current Average forward current Power dissipation VR=0 Junction temperature Storage temperature range Type Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 75 50 2 450 200 150 500 175 –65...+175 Unit V V A mA mA mA mW °C °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction ambient mounted on epoxy–glass hard tissue, Fig. 1, 35mm copper clad, 0.9 mm2 copper area per electrode Symbol Value RthJA 500 Unit K/W Document Number 85567 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 1 (4) 1 page

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PDF MCL4151 Data sheet ( Hoja de datos )