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Número de pieza | MCR106-8 | |
Descripción | Sensitive Gate Silicon Controlled Rectifiers | |
Fabricantes | ON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MCR106-8 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MCR106-6, MCR106-8
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume consumer applications
such as temperature, light and speed control; process and remote control,
and warning systems where reliability of operation is important.
• Glass-Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Device Marking: Device Type, e.g., MCR106–6, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 110°C, Sine Wave 50 to
60 Hz, Gate Open) MCR106–6
MCR106–8
VDRM,
VRRM
400
600
Unit
Volts
On-State RMS Current (TC = 93°C)
(180° Conduction Angles)
IT(RMS) 4.0 Amps
Average On–State Current
(180° Conduction Angles; TC = 93°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
IT(AV)
ITSM
I2t
2.55 Amps
25 Amps
2.6 A2s
vForward Peak Gate Power
(TC = 93°C, Pulse Width 1.0 µs)
Forward Average Gate Power
(TC = 93°C, t = 8.3 ms)
vForward Peak Gate Current
(TC = 93°C, Pulse Width 1.0 µs)
vPeak Reverse Gate Voltage
(TC = 93°C, Pulse Width 1.0 µs)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
VRGM
TJ
0.5
0.1
0.2
6.0
–40 to
+110
Watt
Watt
Amp
Volts
°C
Storage Temperature Range
Tstg
–40 to
°C
+150
Mounting Torque(2)
— 6.0 in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of compression washer (B52200-F006 or
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. (See AN209B). For soldering purposes (either terminal connection
or device mounting), soldering temperatures shall not exceed +200°C. For
optimum results, an activated flux (oxide removing) is recommended.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
http://onsemi.com
SCRs
4 AMPERES RMS
400 thru 600 VOLTS
G
AK
32 1
TO–225AA
(formerly TO–126)
CASE 077
STYLE 2
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
ORDERING INFORMATION
Device
MCR106–6
MCR106–8
Package
TO225AA
TO225AA
Shipping
500/Box
500/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR106/D
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MCR106-8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MCR106-1 | SILICON CONTROLLED RECTIFIERS | Digitron Semiconductors |
MCR106-2 | Silicon Controlled Rectifiers | Motorola Semiconductors |
MCR106-2 | SILICON CONTROLLED RECTIFIERS | Digitron Semiconductors |
MCR106-3 | Silicon Controlled Rectifiers | Motorola Semiconductors |
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