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PDF MCR12DSN Data sheet ( Hoja de datos )
| Número de pieza | MCR12DSN | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR12DSM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
MCR12DSM
MCR12DSN
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
G
• To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR12DSN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR12DSNT4
• To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR12DSN–1
A
K
SCRs
12 AMPERES RMS
600 thru 800 VOLTS
A
K
AG
CASE 369A–13
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
W(TJ = –40 to 110°C, RGK = 1.0 K )
MCR12DSM
MCR12DSN
Symbol
VDRM
VRRM
Value
600
800
Unit
Volts
On–State RMS Current
(All Conduction Angles; TC = 75°C)
Average On–State Current (All Conduction Angles; TC = 75°C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(RMS)
IT(AV)
ITSM
I2t
Amps
12
7.6
100
41 A2sec
Peak Gate Power
m(Pulse Width ≤ 10 sec, TC = 75°C)
Average Gate Power
(t = 8.3 msec, TC = 75°C)
mPeak Gate Current (Pulse Width ≤ 10 sec, TC = 75°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
5.0
0.5
2.0
–40 to 110
–40 to 150
Watts
Amps
°C
Characteristic
Symbol
Max Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
RqJC
RqJA
RqJA
2.2 °C/W
88
80
Maximum Lead Temperature for Soldering Purposes (3)
TL 260 °C
W(1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K ; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1997
1
1 page  
PACKAGE DIMENSIONS
MCR12DSM MCR12DSN
B
VR
–T–
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
Z
CASE 369A–13
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.250
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.033 0.040
F 0.037 0.047
G 0.180 BSC
H 0.034 0.040
J 0.018 0.023
K 0.102 0.114
L 0.090 BSC
R 0.175 0.215
S 0.020 0.050
U 0.020 –––
V 0.030 0.050
Z 0.138 –––
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.84 1.01
0.94 1.19
4.58 BSC
0.87 1.01
0.46 0.58
2.60 2.89
2.29 BSC
4.45 5.46
0.51 1.27
0.51 –––
0.77 1.27
3.51 –––
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
Motorola Thyristor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCR12DSN.PDF ] | |
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