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PDF MCR12M Data sheet ( Hoja de datos )
| Número de pieza | MCR12M | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | ON | |
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MCR12D, MCR12M, MCR12N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave silicon gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
• On–State Current Rating of 12 Amperes RMS at 80°C
• High Surge Current Capability — 100 Amperes
• Rugged, Economical TO220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MCR12D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12D
MCR12M
MCR12N
VDRM,
VRRM
400
600
800
Unit
Volts
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
ITSM
I2t
100 A
41 A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
PGM
5.0 Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV) 0.5 Watts
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
IGM
TJ
2.0
– 40 to
+125
A
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
http://onsemi.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
AK
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR12D
TO220AB
50 Units/Rail
MCR12M
TO220AB
50 Units/Rail
MCR12N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 2
1
Publication Order Number:
MCR12/D
1 page  
MCR12D, MCR12M, MCR12N
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE Z
Q
H
Z
4
1 23
A
K
L
V
G
N
D
–T–
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MCR12M.PDF ] | |
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