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PDF MCR16 Data sheet ( Hoja de datos )
| Número de pieza | MCR16 | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de MCR16 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 16 Amperes RMS
• High Surge Current Capability — 160 Amperes
• Industry Standard TO–220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity
Order this document
by MCR16/D
MCR16
SERIES*
*Motorola preferred devices
SCRs
16 AMPERES RMS
400 thru 800
VOLTS
A
K
A
G
CASE 221A–06
(TO-220AB)
Style 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125°C)
MCR16D
MCR16M
MCR16N
VDRM
VRRM
Volts
400
600
800
On-State RMS Current
(All Conduction Angles)
IT(RMS)
16 A
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
160 A
106 A2sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
5.0
0.5
2.0
– 40 to +125
– 40 to +150
Watts
Watts
A
°C
°C
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
RθJC
RθJA
1.5 °C/W
62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
260 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MCR16.PDF ] | |
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