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PDF MCR69-2 Data sheet ( Hoja de datos )
| Número de pieza | MCR69-2 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | ON | |
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MCR69-2, MCR69-3
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
• Glass-Passivated Junctions for Greater Parameter Stability and
Reliability
• Center-Gate Geometry for Uniform Current Spreading Enabling
High Discharge Current
• Small Rugged, Thermowatt Package Constructed for Low Thermal
Resistance and Maximum Power Dissipation and Durability
• High Capacitor Discharge Current, 750 Amps
• Device Marking: Logo, Device Type, e.g., MCR69–2, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
*Peak Repetitive Off–State Voltage(1)
(TJ = 40 to +125°C, Gate Open)
MCR69–2
MCR69–3
VDRM,
VRRM
50
100
Peak Discharge Current(2)
ITM 750
On-State RMS Current
IT(RMS)
(180° Conduction Angles; TC = 85°C)
25
Average On-State Current
(180° Conduction Angles; TC = 85°C)
IT(AV)
16
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 125°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
300
375
Unit
Volts
Amps
Amps
Amps
Amps
A2s
Forward Peak Gate Current
(t ≤ 1.0 µs, TC = 85°C)
Forward Peak Gate Power
(t ≤ 1.0 µs, TC = 85°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)
Operating Junction Temperature Range
IGM
PGM
PG(AV)
TJ
2.0
20
0.5
– 40 to
+125
Amps
Watts
Watt
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
Mounting Torque
— 8.0 in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various
duration of an exponentially decaying current waveform, tw is defined as
5 time constants of an exponentially decaying current pulse.
(3) Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value,
TJ = 125°C.
http://onsemi.com
SCRs
25 AMPERES RMS
50 thru 100 VOLTS
G
AK
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR69–2
TO220AB
500/Box
MCR69–3
TO220AB
500/Box
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 0
1
Publication Order Number:
MCR69/D
1 page  
MCR69–2, MCR69–3
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE Z
BF
Q
H
Z
4
123
A
K
L
V
G
N
D
T
U
–T–
SEATING
PLANE
C
S
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.014 0.022
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.36 0.55
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
http://onsemi.com
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| PDF Descargar | [ Datasheet MCR69-2.PDF ] | |
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