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MX043 데이터시트 PDF




Microsemi에서 제조한 전자 부품 MX043은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 MX043 기능
기능 RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
제조업체 Microsemi
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MX043 데이터시트, 핀배열, 회로
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
Features
Harris FSC260R die
total dose: 100 kRAD(Si) within pre-radiation parameter limits
dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical
dose rate: 2 x 1012 RAD(Si)/sec @ ID IDM typical
neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
photocurrent: 17 nA/RAD(Si)/sec typical
rated Safe Operating Area Curve for Single event Effects
rugged polysilicon gate cell structure with ultrafast body diode
low inductance surface mount power package available with “J-leads”
(MX043J) or “gullwing-leads” (MX043G)
very low thermal resistance
reverse polarity available upon request add suffix “R”st
Maximum Ratings @ 25°C (unless otherwise
sDpEeScCiRfiIePdT)ION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj= 100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Weight
MX043J
MX043G
200 Volts
44 Amps
50 m
RADIATION
HARDENED
SEGR-RESISTANT
N-CHANNEL
ENHANCEMENT
MODE
POWER MOSFET
SYMBOL
BVDSS
BVDGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
PD
Tj
Tstg
IS
IS M
θJC
-
MAX.
200
200
+/-20
+/-30
44
28
132
44
tbd
tbd
300
-55 to +125
-55 to +125
44
132
0.25
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
Watts
°C
°C
Amps
Amps
°C/W
grams
SINGLE EVENT Ion Species typical LET (MeV/mg/cm)
EFFECTS
Ni
26
SAFE
Br
37
OPERATING
Br
37
AREA
Br
37
Notes
(SEESOA)
Br
37
(1) Pulse test, t 300 µ s, duty cycle δ≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.
Datasheet# MSC0857
typical range (µ)
43
36
36
36
36
VGS
-20V
-5V
-10V
-15V
-20V
VDSmax
200V
200V
160V
100V
40V




MX043 pdf, 반도체, 판매, 대치품
100% SCREENING
a. Internal Visual (Precap) Inspection i.a.w. method 2069 and 2072 of MIL-STD-750
b. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 10 cycles, -55°C to +125°C
c. Thermal Response i.a.w. method 3161 of MIL-STD-750
d. High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD-750: 24 hrs at Tambient= 125°C, Drain shorted to Source and
VGS= 16 V
e. High Temperature Reverse Bias i.a.w. method 1042 cond.A of MIL-STD-750: 24 hrs at Tambient= 125°C, Gate shorted to Source and
VDS= 160 V
f. Final electrical Testing i.a.w. this data sheet (100% DC parameters @ 25°C and sample (22/0) testing for dynamic parameters and
DC parameters @ temperature extremes)
QUALIFICATION INSPECTION
a. Thermal Resistance i.a.w. method 3161 of MIL-STD-750 - sample size= 10 devices/0 rejects
b. Solderability i.a.w. method 2026 of MIL-STD-750 - sample size= 10 devices/0 rejects
c. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 200 cycles, -55°C to +125°C - sample size 10 devices/0 rejects
d. Intermittent Operation Life i.a.w. method 1042D of MIL-STD-750 with Tj= 75°C for 2000 cycles (monitoring thermal response
shift) - sample= 25 devices/0 rejects
e. Steady State Operation Life i.a.w. method 1042A of MIL-STD-750 at Tj= 115°C min. for 1000 hrs - sample= 25 devices/0 rejects
f. Steady state Gate Life i.a.w. method 1042B of MIL-STD-750 at Tj= 115°C min. for 1000 hrs. - sample= 25 devices/0 rejects
g. Safe Operating Area i.a.w. method 3474 of MIL-STD-750 (monitoring thermal response shift) - sample size= 10 devices/0 rejects
h. Shock i.a.w. method 2016 of MIL-STD-750 - sample size= 10 devices/0 rejects
i. Vibration i.a.w. method 2056 of MIL-STD-750 - sample size= 10 devices/0 rejects
j. Acceleration i.a.w. method 2006 of MIL-STD-750 - sample size= 10 devices/0 rejects
k. X-ray, one view of the die attach area (Oz axis) - sample= 10 devices/0 rejects
l. Humidity ????? - sample size= 5 devices/0 rejects

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