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7MBP150RA120 데이터시트 PDF




Fuji Electric에서 제조한 전자 부품 7MBP150RA120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 7MBP150RA120 자료 제공

부품번호 7MBP150RA120 기능
기능 IGBT-IPM(1200V/150A)
제조업체 Fuji Electric
로고 Fuji Electric 로고


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7MBP150RA120 데이터시트, 핀배열, 회로
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7MBP150RA120
IGBT-IPM R series
1200V / 150A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current
DC
1ms
DC
Collector power dissipation One transistor
DB Collector current
DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
VR
IC
ICP
-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Rating
Unit
Min. Max.
0 900 V
0 1000 V
200 800 V
0 1200 V
- 1200 V
- 150 A
- 300 A
- 150 A
- 1040 W
- 50 A
- 100 A
- 50 A
- 400 W
- 150 °C
0 20 V
0 Vz V
- 1 mA
0 Vcc V
- 15 mA
-40 125 °C
-20 100 °C
- AC2.5 kV
- 3.5 *6 N·m
- 3.5 *6 N·m
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Fig.1 Measurement of case temperature
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
DB
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Symbol
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
Condtion
VCE=1200V input terminal open
Ic=150A
-Ic=150A
VCE=1200V input terminal open
Ic=50A
-Ic=50A
Min.
Typ.
Max.
1.0
2.6
3.0
1.0
2.6
3.3
Unit
mA
V
V
mA
V
V




7MBP150RA120 pdf, 반도체, 판매, 대치품
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7MBP150RA120
Characteristics (Representative)
Control Circuit
Power supply current vs. Switching frequency
Tj=100°C
80
P-side
70 N-side
Vcc=17V
Vcc=15V
60 Vcc=13V
50
40
30 Vcc=17V
20 Vcc=15V
Vcc=13V
10
0
0 5 10 15 20 25
Switching frequency : fsw (kHz)
IGBT-IPM
Input signal threshold voltage
vs. Power supply voltage
2.5
Tj=25°C
Tj=125°C
2
} Vin(off)
1.5 } Vin(on)
1
0.5
0
12 13 14 15 16 17 18
Power supply voltage : Vcc (V)
Under voltage vs. Junction temperature
14
12
10
8
6
4
2
0
20 40 60 80 100 120 140
Junction temperature : Tj (°C)
Under voltage hysterisis vs. Jnction temperature
1
0.8
0.6
0.4
0.2
0
20 40 60 80 100 120 140
Junction temperature : Tj (°C)
Alarm hold time vs. Power supply voltage
3
2.5
Tj=125°C
2
Tj=25°C
1.5
1
0.5
0
12 13 14 15 16 17 18
Power supply voltage : Vcc (V)
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
200
TjOH
150
TcOH
100
50
0
12
TcH,TjH
13 14 15 16 17
Power supply voltage : Vcc (V)
18

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7MBP150RA120 전자부품, 판매, 대치품
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7MBP150RA120
Over current protection vs. Junction temperature
Vcc=15V
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140
Junction temperature : Tj(°C)
IGBT-IPM

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일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

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관련 데이터시트

부품번호상세설명 및 기능제조사
7MBP150RA120

IGBT-IPM(1200V/150A)

Fuji Electric
Fuji Electric

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