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부품번호 | 7MBR10SA120 기능 |
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기능 | IGBT(1200V/10A) | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 7 페이지수
7MBR10SA120
IGBT MODULE (S series)
1200V / 10A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
PC
VCES
VGES
IC
ICP
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1 device
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
Rat ing
1200
±20
15
10
30
20
10
75
1200
±20
15
10
30
20
75
1200
1600
10
105
55
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
N·m
IGBT Modules
7MBR10SA120
1000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=120Ω, Tj=25°C
500 toff
ton
tr
100
tf
50
0
5000
1000
500
5 10
Collector current : Ic [ A ]
15
20
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C
ton
toff
tr
100
50
50
8
tf
100 500 1000
Gate resistance : Rg [ Ω ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=±15V, Tj=125°C
2000
Eon
6
4
2
Eoff
0
50 100
Err
500
1000
2000
Gate resistance : Rg [ Ω ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=120Ω, Tj=125°C
1000
toff
500
ton
tr
tf
100
50
0
3
5 10
Collector current : Ic [ A ]
15
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=120Ω
20
Eon(125 oC)
2
Eon(25 oC)
Eoff(125 oC)
1
Eoff(25 oC)
Err(125 oC)
Err(25 oC)
0
0 5 10 15 20
Collector current : Ic [ A ]
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>120Ω, T=j<125°C
25
20
15
10
5
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]
4페이지 IGBT Modules
Outline Drawings, mm
7MBR10SA120
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ 7MBR10SA120.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
7MBR10SA120 | IGBT(1200V/10A) | Fuji Electric |
7MBR10SA120D-01 | IGBT Module | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |