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부품번호 | 7MBR15NE120 기능 |
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기능 | IGBT MODULE(1200V/15A/PIM) | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 9 페이지수
7MBR15NE120
IGBT MODULE
1200V / 15A / PIM
IGBT Modules
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I²t (Non-Repetitive)
Symbol
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM
Operating junction temperature
Storage temperature
Isolation voltage
Tj
Tstg
Viso
Mounting screw torque
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
Ra ting
1200
±20
15
30
15
120
1200
±20
10
20
88
1200
1
50
1600
1700
25
320
512
+150
-40 to +125
AC 2500
1.7 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m
IGBT Module
7MBR15NE120
Switching time vs. RG
Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C
1000
100
100
Gate resistance : RG [ohm]
Forward current vs. Forward voltage
VGE=0V
30
20
10
1000
800
Dynamic input characteristics
Tj=25°C
25
20
600 15
400 10
200 5
00
0
50
100 150
200 250 300
Gate charge : Qg [nC]
Reverse recovery characteristics
trr, Irr, vs. IF
100
10
0
012
34
Forward voltage : VF [V]
Transient thermal resistance
1
0.1
0.01
0.001
0.01
0.1
Pulse width : PW [sec.]
1
50
5 10
Forward current : IF [A]
15
20
Reversed biased safe operating area
+VGE=15V, -VGE <= 15V, Tj =< 125°C, RG => 82 ohm
140
120
100
80
60
40
20
0
1
0
200
400
600
800
1000
1200
Collector-Emitter voltage : VCE [V]
4페이지 IGBT Module
7MBR15NE120
Switching time vs. RG
Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C
1000
100
100
Gate resistance : RG [ohm]
1000
800
600
400
1000
200
0
0
Reversed biased safe operating area
+VGE=15V, -VGE =< 15V, Tj <= 125°C, RG => 120 ohm
100
80
60
40
20
0
0
200
400
600
800
1000
1200
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
10
4
3
2
1
0
0
Dynamic input characteristics
Tj=25°C
50 100
Gate charge : Qg [nC]
150
Switching loss vs. Collector current
Vcc=600V, RG=120 ohm, VGE=±15V
5 10
Collector current : Ic [A]
15
25
20
15
10
5
0
200
20
1
0.1
0 5 10 15 20 25 30 35
Collector-Emitter voltage : VCE [V]
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ 7MBR15NE120.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
7MBR15NE120 | IGBT MODULE(1200V/15A/PIM) | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |