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부품번호 | 7MBR50NE-060 기능 |
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기능 | Power Integrated Module (PIM) | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 8 페이지수
Power Integrated Module (PIM)
n Features
• Included Rectifier and Brake Chopper
• Square RBSOA
• Low Saturation Voltage
• Overcurrent Limiting Function
( ~ 3 Times Rated Current )
n Equivalent Circuit
n Outline Drawing
n Absolute Maximum Ratings ( Tc=25°C)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Average Output Current
Surge Current (Non Repetitive)
I2t (Non Repetitive)
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Operating Junction Temperature
Storage Temperature
Isolation Voltage
Mounting Screw Torque *1
Symbols
VCES
VGES
IC
IC PULSE
-IC PULSE
PC
VRRM
VRSM
IO
IFSM
VCES
VGES
IC
IC PULSE
PC
VRRM
IF(AV)
IFSM
Tj
TStg
VISO
Test Conditions
Ratings Units
600
± 20
V
Continuous
50
1ms 100 A
1ms 50
1 device
200 W
800
900
V
50Hz/60Hz sin. wave
Tj=150°C, 10ms
50
350
A
Tj=150°C, 10ms
648 A2s
600 V
± 20
Continuous
1ms
50
100
A
1 device
200 W
600 V
10ms
1
50
A
+150
-40 ∼ +125
°C
A.C. 1min.
2500
V
1.7 Nm
Note: *1:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
1000
100
Switching time vs. RG
VCC=300V, IC=30A, VGE=±15V, Tj=25°C
ton
toff
tr
tf
10
10
70
60
50
40
30
20
10
0
0
100
Gate resistance : RG [Ω ]
FRD
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
123
Forward voltage : VF [V]
4
Transient thermal resistance
FRD
Converter Diode
1
IGBT
0,1
0,001
0,01
0,1
Pulse width : PW [sec]
1
500
400
300
200
100
0
0
100
10
Dynamic input characteristics
Tj=25°C
25
VCC=200V
300V
20
400V
15
10
5
50 100
Gate charge : QG [nC]
150
0
Reverse recovery characteristics
trr , Irr vs. IF
trr 125°C
trr 25°C
Irr 125°C
Irr 25°C
1
0 10 20 30 40 50
Forward current : IF [A]
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>82Ω
300
250
200
SCSOA
(non-repetitive pulse)
150
100
50
0
0
RBSOA (Repetitive pulse)
100 200 300 400 500 600
Collector-Emitter voltage : VCE [V]
4페이지 1000
100
Switching time vs. RG
Brake Chopper IGBT
VCC=300V, IC=50A, VGE=±15V, Tj=25°C
500
ton
toff 400
tr
300
tf
200
Dynamic input characteristics
T j= 2 5 ° C
25
VCC=200V
300V
400V
20
15
10
10
10
100
Gate resistance : RG [Ω ]
100
0
0
5
0
50 100 150 200 250 300
Gate charge : QG [nC]
Reversed biased safe operating area
500
+VGE=15V, -VGE<15V, Tj<125°C, RG>51Ω
Switching loss vs. Collector current
VCC=300V, RG=51Ω , VGE=+15V
5
400
300 SCSOA
(non-repetitive pulse)
200
100
0
0
RBSOA (Repetitive pulse)
100 200 300 400 500
Collector-Emitter voltage : VCE [V]
600
4 Eoff125C
3 Eoff25C
Eon125C
2
E on2 5 C
1
E rr125C
E rr25C
0
0 20 40 60 80
Collector-Emitter Current : IC[A]
Capacitance vs. Collector-Emitter Voltage
Tj=25C
10
C ies
1
0,1
0
C oes
C res
5 10 15 20 25 30
Collector-Emitter Voltage : VCE[V]
35
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ 7MBR50NE-060.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
7MBR50NE-060 | Power Integrated Module (PIM) | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |