|
|
PDF MJD112 Data sheet ( Hoja de datos )
| Número de pieza | MJD112 | |
| Descripción | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MJD112 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD112/D
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Surface Mount Replacements for TIP110–TIP117 Series
• Monolithic Construction With Built–in Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ High DC Current Gain — hFE = 2500 (Typ) @ IC = 2.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Complementary Pairs Simplifies Designs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
Symbol
VCEO
VCB
VEB
IC
MJD112
MJD117
100
100
5
2
4
Unit
Vdc
Vdc
Vdc
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
IB
PD
PD
TJ, Tstg
50
20
0.16
1.75
0.014
– 65 to + 150
mAdc
Watts
W/_C
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
6.25
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient*
RθJA
71.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
_C/W
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus) 100 — Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 50 Vdc, IB = 0)
ICEO
— 20 µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 100 Vdc, IE = 0)
ICBO
— 20 µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5 Vdc, IC = 0)
IEBO
— 2 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv v* These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
MJNDP1N12*
PNP
MJD117*
*Motorola Preferred Device
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS
20 WATTS
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
inches
mm
1
1 page  
NPN MJD112
MJD112 MJD117
PNP MJD117
+ 0.8
*APPLIED FOR IC/IB < hFE/3
0
– 0.8
– 1.6
– 2.4 *θVC FOR VCE(sat)
– 3.2
θVC FOR VBE
–4
25°C TO 150°C
– 55°C TO 25°C
25°C TO 150°C
– 55°C TO 25°C
+ 0.8
*APPLIES FOR IC/IB < hFE/3
0
25°C TO 150°C
– 0.8
– 1.6 *θVC FOR VCE(sat)
– 2.4
– 3.2
– 4 θVB FOR VBE
– 55°C TO 25°C
25°C TO 150°C
– 55°C TO 25°C
– 4.8
0.04 0.06
0.1 0.2
0.4 0.6 1
IC, COLLECTOR CURRENT (AMP)
2
4
– 4.8
0.04 0.06
0.1 0.2
0.4 0.6 1
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
2
4
105
REVERSE
104
FORWARD
105
REVERSE
104
FORWARD
103 VCE = 30 V
103 VCE = 30 V
102
TJ = 150°C
101
100 100°C
102
TJ = 150°C
101
100°C
100 25°C
10–1
– 0.6 – 0.4
25°C
– 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
10–1
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
– 1.2 – 1.4
Figure 11. Collector Cut–Off Region
PNP
COLLECTOR
NPN
COLLECTOR
BASE
BASE
≈ 8 k ≈ 120
≈ 8 k ≈ 120
EMITTER
Figure 12. Darlington Schematic
EMITTER
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJD112.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MJD112 | Silicon NPN transistor |  BLUE ROCKET ELECTRONICS |
| MJD112 | Silicon NPN epitaxial planer Transistors |  MCC |
| MJD112 | Silicon NPN Power Transistor |  Inchange Semiconductor |
| MJD112 | NPN Silicon Darlington Transistor |  Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |