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기능 COMPLEMENTARY SILICON POWER DARLINGTONS
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MJE127 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
Electrically Similar to the Popular TIP122 and TIP127
100 VCEO(sus)
5 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain — 2000 (Min) @ IC = 3 Adc
UL Recognized, File #E69369, to 3500 VRMS Isolation
Order this document
by MF122/D
MJNFP1N22
MJPFN1P27
COMPLEMENTARY
SILICON
POWER DARLINGTONS
5 AMPERES
100 VOLTS
30 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCASE 221D–02
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTO–220 TYPE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H. < 30%,
TA = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
Test No. 1 Per Fig. 14
Test No. 2 Per Fig. 15
Test No. 3 Per Fig. 16
VCEO
VCB
VEB
VISOL
IC
100
100
5
4500
3500
1500
5
8
Vdc
Vdc
Vdc
VRMS
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB 0.12 Adc
PD 30 Watts
0.24 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
Derate above 25_C
PD 2 Watts
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
RθJA
62.5 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case*
RθJC
4.1 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purpose
TL 260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1




MJE127 pdf, 반도체, 판매, 대치품
MJF122 MJF127
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
2
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
PNP
NPN
5 10 20 50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 6. Typical Small–Signal Current Gain
300
TJ = 25°C
200
Cob
100
70 Cib
50
30
0.1 0.2
PNP
NPN
0.5 1 2
5 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
50 100
NPN
MJF122
PNP
MJF127
20,000
10,000
5000 TJ = 150°C
3000
2000
25°C
1000
500 – 55°C
VCE = 4 V
20,000
10,000
7000
5000
3000
2000
TJ = 150°C
25°C
1000
700
500 – 55°C
VCE = 4 V
300
200
0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
5 7 10
300
200
0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
5 7 10
Figure 8. Typical DC Current Gain
3
2.6
IC = 2 A
4A
2.2
6A
TJ = 25°C
3
2.6
IC = 2 A
4A
2.2
TJ = 25°C
6A
1.8 1.8
1.4 1.4
1
0.3 0.5 0.7 1
2 3 5 7 10
20 30
1
0.3 0.5 0.7 1
23
5 7 10
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Typical Collector Saturation Region
20 30
4 Motorola Bipolar Power Transistor Device Data

4페이지










MJE127 전자부품, 판매, 대치품
PACKAGE DIMENSIONS
MJF122 MJF127
–B–
F
Q
A
123
H
K
–Y–
–T–
SEATING
PLANE
C
S
U
G
N
L
D 3 PL
0.25 (0.010) M B M Y
J
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.621 0.629
B 0.394 0.402
C 0.181 0.189
D 0.026 0.034
F 0.121 0.129
G 0.100 BSC
H 0.123 0.129
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.200 BSC
Q 0.126 0.134
R 0.107 0.111
S 0.096 0.104
U 0.259 0.267
MILLIMETERS
MIN MAX
15.78 15.97
10.01 10.21
4.60 4.80
0.67 0.86
3.08 3.27
2.54 BSC
3.13 3.27
0.46 0.64
12.70 14.27
1.14 1.52
5.08 BSC
3.21 3.40
2.72 2.81
2.44 2.64
6.58 6.78
STYLE 2:
PIN 1.
2.
3.
BASE
COLLECTOR
EMITTER
CASE 221D–02
TO–220 TYPE
ISSUE D
Motorola Bipolar Power Transistor Device Data
7

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