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PDF MJE13003 Data sheet ( Hoja de datos )
| Número de pieza | MJE13003 | |
| Descripción | 1.5A, 400V, NPN SILICON POWER TRANSISTOR | |
| Fabricantes | ON | |
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MJE13003
SWITCHMODEt Series NPN
Silicon Power Transistor
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
• Reverse Biased SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C
tc @ 1 A, 100_C is 290 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
− Continuous
− Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current
− Continuous
− Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
Value
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
–65 to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
mW/_C
W
mW/_C
_C
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Load Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8″ from Case for 5 Seconds
RqJC
RqJA
TL
3.12 _C/W
89 _C/W
275 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
http://onsemi.com
1.5 AMPERES
NPN SILICON POWER
TRANSISTORS
300 AND 400 VOLTS
40 WATTS
321
TO−225
CASE 77
STYLE 3
MARKING DIAGRAM
1 BASE
2 COLLECTOR
3 EMITTER
YWW
JE
13003G
Y
WW
JE13003
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13003
MJE13003G
TO−225
TO−225
(Pb−Free)
500 Units/Box
500 Units/Box
Publication Order Number:
MJE13003/D
1 page  
MJE13003
ICPK Vclamp
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ90% Vclamp 90%IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIC tsv trv tfi tti
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIB 90%IB1
tc
10% Vclamp
10%
ICPK 2% IC
Table 2. Typical Inductive Switching Performance
IC TC tsv trv tfi tti tc
AMP _C ms ms ms ms ms
0.5 25 1.3 0.23 0.30 0.35 0.30
100 1.6 0.26 0.30 0.40 0.36
1 25 1.5 0.10 0.14 0.05 0.16
100 1.7 0.13 0.26 0.06 0.29
1.5 25 1.8 0.07 0.10 0.05 0.16
100 3 0.08 0.22 0.08 0.28
TIME
Figure 7. Inductive Switching Measurements
NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 −90% Vclamp
tfi = Current Fall Time, 90−10% IC
tti = Current Tail, 10−2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching
waveforms is shown in Figure 7 to aid in the visual identity
of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN−222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ] tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100_C.
http://onsemi.com
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| PDF Descargar | [ Datasheet MJE13003.PDF ] | |
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