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부품번호 | MJE1320 기능 |
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기능 | POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 8 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE1320/D
MJE1320
™Designer's Data Sheet
NPN Silicon Power Transistor
POWER TRANSISTOR
Switchmode Series
2 AMPERES
900 VOLTS
This transistor is designed for high–voltage, power switching in inductive circuits
80 WATTS
where RBSOA and breakdown voltage are critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
• Fluorescent Lamp Ballasts
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Features:
• High VCEV Capability (1800 Volts)
• Low Saturation Voltage
• 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
CASE 221A–06
Switching Times with Inductive Loads
Saturation Voltages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
TO–220AB
Symbol
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
TJ, Tstg
Symbol
RθJC
TL
Value
900
1800
9
2
5
1.5
2.5
80
32
0.64
– 65 to + 150
Max
1.56
275
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SWITCHMODE is a trademark of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
MJE1320
IC
VCE
IB
TYPICAL DYNAMIC CHARACTERISTICS
IC pk VCE(pk)
10
7
90% VCE(pk) 90% IC(pk)
tsv trv tfi tti
5
3
90% IB1
tc
10% VCE(pk)
10%
IC pk
2% IC
2
1
VBE(off) = 1 V
2V
3V
TJ = 100°C
IC/IB1 = 2
0.7
TIME
Figure 7. Inductive Switching Measurements
0.5
0.3
0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Inductive Storage Time
56
66
55
VBE(off) = 3 V
3
2V 3
VBE(off) = 3 V
2 1V 2 2V
1V
11
0.7 0.7
0.5 0.5
0.3
0.3
0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Crossover Time
56
0.3
0.3
0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Inductive Fall Time
56
td and tr
Table 1. Resistive Load Switching
ts and tf
+ Vdc ≈ 11 Vdc
H.P. 214
OR EQUIV.
P.G.
*IB
RB = 22 Ω
50
*IC
T.U.T.
RL
VCC
0V
≈ – 35 V
H.P. 214
OR EQUIV.
P.G.
50
+
10 µF
20 100
0.02 µF
0.02 µF
500 1 µF 100
2N6191
RB1
RB2
2N5337
A
Vin
0V
≈ 11 V
tr ≤ 15 ns
*Tektronix AM503
*P6302 or Equivalent
VCC = 250 Vdc
RL = 250 Ω
IC = 1 Adc
IB = 0.5 Adc
0V
A
50
+V
–5 V
*IB
–V
T.U.T.
*IC RL
VCC
VCC = 250 Vdc
RL = 250 Ω
IC = 1 Adc
IB1 = 0.5 Adc
IB2 = 0.5 Adc
For VBE(off) = 5 V
RB1 = 22 Ω
RB2 = 10 Ω
RB2 = 0 Ω
Note: Adjust – V to obtain desired VBE(off) at Point A.
4 Motorola Bipolar Power Transistor Device Data
4페이지 PACKAGE DIMENSIONS
MJE1320
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Motorola Bipolar Power Transistor Device Data
7
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부품번호 | 상세설명 및 기능 | 제조사 |
MJE1320 | POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS | Motorola Semiconductors |
MJE1320 | POWER TRANSISTOR | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |