PDF MJE15030 Data sheet ( Hoja de datos )

Número de pieza	MJE15030
Descripción	8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE15028/D Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031 • High Current Gain — Bandwidth Product ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎfT = 30 MHz (Min) @ IC = 500 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• TO–220AB Compact Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Collector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg MJE15028 MJE15030 MJE15029 MJE15031 120 150 120 150 5.0 8.0 16 2.0 50 0.40 2.0 0.016 – 65 to + 150 Unit Vdc Vdc Vdc Adc Adc Watts W/_C Watts W/_C _C Symbol Max Unit RθJC 2.5 _C/W RθJA 62.5 _C/W TA TC MJEN1P5N028* MJE15030* MJEP1N5P029* MJE15031* *Motorola Preferred Device 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120 – 150 VOLTS 50 WATTS CASE 221A–06 TO–220AB 3.0 60 2.0 40 1.0 20 TC TA 00 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 1 1 page MJE15028 MJE15030 MJE15029 MJE15031 PACKAGE DIMENSIONS Q H Z B 4 1 23 F T –T– SEATING PLANE C S A U K L V G N D R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES DIM MIN MAX A 0.570 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.147 G 0.095 0.105 H 0.110 0.155 J 0.018 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 0.255 U 0.000 0.050 V 0.045 ––– Z ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 5 Page

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PDF Descargar	[ Datasheet MJE15030.PDF ]

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