Datasheet.kr   

MJE15031 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MJE15031
기능 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS
제조업체 Motorola
로고 Motorola 로고 


전체 6 페이지

		

No Preview Available !

MJE15031 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE15028/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use as high–frequency drivers in audio amplifiers.
DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029
VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031
High Current Gain — Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎfT = 30 MHz (Min) @ IC = 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
MJE15028 MJE15030
MJE15029 MJE15031
120 150
120 150
5.0
8.0
16
2.0
50
0.40
2.0
0.016
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Symbol
Max
Unit
RθJC
2.5 _C/W
RθJA
62.5 _C/W
TA TC
MJEN1P5N028*
MJE15030*
MJEP1N5P029*
MJE15031*
*Motorola Preferred Device
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
120 – 150 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1




MJE15031 pdf, 반도체, 판매, 대치품
MJE15028 MJE15030 MJE15029 MJE15031
NPN — MJE15028 MJE15030
PNP — MJE15029 MJE15031
1K
500
TJ = 150°C
200
150
100 TJ = 25°C
70
50 TJ = – 55°C
30
20
VCE = 2.0 V
1K
500
TJ = 150°C
200
100 TJ = 25°C
TJ = – 55°C
50
20
VCE = 2 V
10
0.1 0.2
0.5 1.0 2.0
5.0 10
10
0.1 0.2
0.5 1.0 2.0
5.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
NPN
PNP
10
TJ = 25°C
1.6
1.8 TJ = 25°C
1.4
1.2
1.0
VBE(sat) @ IC/IB = 10
1.0
0.8 VBE(sat) @ IC/IB = 10
0.6
0.2
0.1
VBE(on) @ VCE = 2.0 V
VCE(sat) = IC/IB = 20
IC/IB = 10
0.2 0.5 1.0 2.0 5.0
IC, COLLECTOR CURRENT (AMP)
10
0.4
0
0.1
VBE(on) @ VCE = 2.0 V
VCE(sat) = IC/IB = 20
IC/IB = 10
0.2
0.5 1.0 2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltage
10
1.0
0.5
0.2
0.1
0.05
0.03
0.02
0.01
0.1
tr (PNP)
VCC = 80 V
IC/IB = 10
TJ = 25°C
td (NPN, PNP)
tr (NPN)
0.2 0.5 1.0 2.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. Turn–On Times
10
10
5.0
3.0
2.0
1.0
0.5 tf (PNP)
VCC = 80 V
IC/IB = 10, IB1 = IB2
ts (NPN) TJ = 25°C
ts (PNP)
0.2 tf (NPN)
0.1
0.1
0.2 0.3 0.5
2.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Turn–Off Times
10
4 Motorola Bipolar Power Transistor Device Data

4페이지













구       성총 6 페이지
다운로드[ MJE15031.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
MJE15030

Power Transistors

RECTRON
RECTRON
MJE15030

NPN Transistor

Central Semiconductor
Central Semiconductor

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵