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MJE15032 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MJE15032
기능 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS
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MJE15032 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE15032/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use as high–frequency drivers in audio amplifiers.
DC Current Gain Specified to 5.0 Amperes
hFE = 50 (Min) @ IC = 0.5 Adc
hFE = 10 (Min) @ IC = 2.0 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 250 Vdc (Min) — MJE15032, MJE15033
High Current Gain — Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
Symbol
RθJC
RθJA
MJE15032
MJE15033
250
250
5.0
8.0
16
2.0
50
0.40
2.0
0.016
– 65 to + 150
Max
2.5
62.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Unit
_C/W
_C/W
TA TC
3.0 60
NPN
MJE15032*
PNP
MJE15033*
*Motorola Preferred Device
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY
SILICON
250 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
1




MJE15032 pdf, 반도체, 판매, 대치품
MJE15032 MJE15033
NPN — MJE15032
10
150°C
1.0 25°C
–55°C
0.1
0.01
0.1
100
10
1.0
0.1
0.01
0.1
10
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 8. NPN — MJE15032
VCE(sat) IC/IB = 10
10
150°C
25°C
–55°C
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. NPN — MJE15032
VCE(sat) IC/IB = 20
10
100
10
1.0
0.1
0.01
0.1
100
10
1.0
0.1
0.01
0.1
10
PNP — MJE15033
25°C
–55°C
150°C
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. PNP — MJE15033
VCE(sat) IC/IB = 10
10
150°C
25°C
–55°C
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. PNP — MJE15033
VCE(sat) IC/IB = 20
10
1.0 –55°C
25°C
150°C
1.0 –55°C
25°C
150°C
0.1
0.1
1.0
0.1
10 0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 12. NPN — MJE15032
VBE(sat) IC/IB = 10
Figure 13. PNP — MJE15033
VBE(sat) IC/IB = 10
4 Motorola Bipolar Power Transistor Device Data

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