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PDF MJE5740 Data sheet ( Hoja de datos )
| Número de pieza | MJE5740 | |
| Descripción | POWER DARLINGTON TRANSISTORS | |
| Fabricantes | ON | |
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MJE5740, MJE5742
MJE5742 is a Preferred Device
NPN Silicon Power
Darlington Transistors
The MJE5740 and MJE5742 Darlington transistors are designed for
high−voltage power switching in inductive circuits.
Features
• Pb−Free Packages are Available*
Applications
• Small Engine Ignition
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
http://onsemi.com
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300−400 VOLTS
80 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
VCEO(sus)
MJE5740
MJE5742
Value
300
400
Unit
Vdc
Collector−Emitter Voltage
MJE5740
MJE5742
VCEV
Vdc
600
800
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
VEB
IC
ICM
IB
IBM
PD
8 Vdc
8 Adc
16
2.5 Adc
5
2W
16 W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
80 W
640 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
1.25 _C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
275 _C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 6
1
≈ 100 ≈ 50
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 1
MJE574xG
AY WW
MJE574x
G
A
Y
WW
= Device Code
x = 0 or 2
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE5740/D
1 page  
MJE5740, MJE5742
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
REVERSE BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
16
10
8
100 ms
3 10 ms
5 ms
1
0.5
0.3
BONDING WIRE LIMIT
THERMAL LIMIT
dc
1 ms
(SINGLE PULSE)
0.1 SECOND BREAKDOWN LIMIT
0.05 CURVES APPLY BELOW RATED VCEO
MJE5742
MJE5740
0.02
5
10 20
50 100 200 400
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Forward Bias Safe Operating Area
16
14
12
10
8
6
VBE(off) ≤ 5 V
TJ = 100°C
4
2
MJE5742
MJE5740
0
0 100 200 300 400
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
500
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
1 tr
0.7
0.5
0.3
0.2 td
0.1
0.07
0.05
VCC = 250 V
IB1 = IB2
IC/IB = 20
0.03
0.02
0.2 0.3
0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Turn−On Time
10
7 ts
5
3
2
1
0.7
0.5
0.3
0.2
0.2 0.3
VCC = 250 V
IB1 = IB2
tf IC/IB = 20
0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn−Off Time
http://onsemi.com
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