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부품번호 | MJE5850 기능 |
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기능 | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 8 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5850/D
MJE5850
™Designer's Data Sheet
SWITCHMODE Series
MJE5851*
MJE5852*
PNP Silicon Power Transistors
*Motorola Preferred Device
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-
age, high–speed, power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switchmode applications such as:
8 AMPERE
PNP SILICON
POWER TRANSISTORS
300, 350, 400 VOLTS
• Switching Regulators
• Inverters
80 WATTS
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
100 ns Inductive Fall Time @ 25_C (Typ)
125 ns Inductive Crossover Time @ 25°C (Typ)
Operating Temperature Range –65 to + 150_C
100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSaturation Voltages
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Symbol
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
MJE5850
300
350
TJ, Tstg
Symbol
RθJC
TL
CASE 221A–06
TO–220AB
MJE5851
350
400
6.0
8.0
16
4.0
8.0
80
0.640
– 65 to 150
MJE5852
400
450
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max Unit
1.25 _C/W
275 _C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
MJE5850 MJE5851 MJE5852
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
0.0025 µF
+V
50 µF
+–
–10 V
0
20
1
2
PW Varied to Attain
IC = 100 mA
INPUT
+V
0
50 Ω
2W
0.2 µF
500 Ω
0.1 µF
500 Ω
1/2 W
500 Ω 1/2 W
1/2 W
0.0033 µF
500 Ω
0.2 µF
1/2 W
0.1 µF
MJE15029
1N4934
1Ω2W
MJE15028
0.1 µF
1
2
– V adjusted to obtain desired IB1
+ V adjusted to obtain desired VBE(off)
–+
50 µF
–V
Lcoil = 80 mH, VCC = 10 V
Rcoil = 0.7 Ω
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 20 V
Vclamp = 250 V
RB adjusted to attain desired IB1
INDUCTIVE TEST CIRCUIT
TUT
1
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
1N4937
OR
EQUIVALENT
Vclamp
RS =
0.1 Ω
Rcoil
Lcoil
VCC
OUTPUT WAVEFORMS
IC
ICM
t1
VCE VCEM
TIME
tf Clamped
t
tf
Vclamp
t
t2
t1 Adjusted to
Obtain IC
t1 ≈
Lcoil (ICM)
VCC
t2 ≈
Lcoil (ICM)
VClamp
Test Equipment
Scope — Tektronix
475 or Equivalent
RESISTIVE SWITCHING
TURN–ON TIME
1
2
IB1
IB1 adjusted to
obtain the forced
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
VCC = 250 V
RL = 62 Ω
Pulse Width = 10 µs
RESISTIVE TEST CIRCUIT
TUT
1 RL
2 VCC
IB
10%
90% IB1 VCEM
tc
10% 2%
ICM ICM
VCE tfi
tsr trv tti
IC
90%
ICM
ICM
TIME
Vclamp
VCEM
Figure 7. Inductive Switching Measurements
1.0
tc 100°C
0.8
0.6 tsv 100°C
0.4
IC = 4 A
IC/IB = 4
TJ = 25°C
tsv 25°C
0.2 tc 25°C
0
0 1 2 34 5 6 7
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 8. Inductive Switching Times
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
8
4 Motorola Bipolar Power Transistor Device Data
4페이지 PACKAGE DIMENSIONS
MJE5850 MJE5851 MJE5852
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Motorola Bipolar Power Transistor Device Data
7
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부품번호 | 상세설명 및 기능 | 제조사 |
MJE5850 | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS | Motorola Semiconductors |
MJE5850 | Trans GP BJT PNP 300V 8A 3-Pin(3+Tab) TO-220AB Rail | New Jersey Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |