PDF MJE702 Data sheet ( Hoja de datos )

Número de pieza	MJE702
Descripción	Monolithic Construction With Built-in Base- Emitter Resistors
Fabricantes	Fairchild
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No Preview Available ! MJE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 1 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Sym- bol Parameter Value Unit s VCBO Collector- Base Voltage : MJE700/701 - 60 V : MJE702/703 - 80 V VCEO Collector-Emitter Voltage : MJE700/701 - 60 V : MJE702/703 - 80 V VEBO IC IB PC TJ TSTG Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature -5 -4 - 0.1 40 150 - 55 ~ 150 V A A W °C °C Equivalent Circuit C B R1 R1 ≅ 10kΩ R2 ≅ 0.6kΩ R2 E Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage : MJE700/701 : MJE702/703 IC = - 10mA, IB = 0 ICEO ICBO IEBO hFE VCE(sat) VBE(on) Collector Cut-off Current : MJE700/701 : MJE702/703 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : MJE700/702 : MJE701/703 : ALL DEVICES Collector-Emitter Saturation Voltage : MJE700/702 : MJE701/703 : ALL DEVICES Base-Emitter On Voltage : MJE700/702 : MJE701/703 : ALL DEVICES VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = - 5V, IC = 0 VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = - 40mA VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A Min. Max. Units -60 V -80 V -100 -100 -100 -500 µA µA µA µA -2 mA 750 750 100 -2.5 V -2.8 V -3 V -1.2 V -2.5 V -3 V ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 1 page

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