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Número de pieza | MJE702 | |
Descripción | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MJE702 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
• Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage
Multiplication
• Choice of Packages —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMJE700 and MJE800 series
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎT0220AB, MJE700T and MJE800T
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
Symbol
VCEO
VCB
VEB
IC
IB
MJE700,T
MJE800,T
60
MJE702
MJE703
MJE802
MJE803
80
60 80
5.0
4.0
0.1
CASE 77 TO–220
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
PD
40 50
0.32 0.40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 55 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCASE 77
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTO–220
RθJC
3.13
2.50
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
50
40
TO–220AB
30
TO–126
20
10
REV 3
0
25 50 75 100 125
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
150
Order this document
by MJE700/D
PNP
MJE700,T
MJE702
MJE703
NPN
MJE800,T
MJE802
MJE803
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
CASE 77–08
TO–225AA TYPE
MJE700 – 703
MJE800 – 803
CASE 221A–06
TO–220AB
MJE700T
MJE800T
1
1 page MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803
PACKAGE DIMENSIONS
–B–
U
F
QM
–A–
123
H
K
C
VJ
GR
S 0.25 (0.010) M A M B M
D 2 PL
0.25 (0.010) M A M B M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.425 0.435
B 0.295 0.305
C 0.095 0.105
D 0.020 0.026
F 0.115 0.130
G 0.094 BSC
H 0.050 0.095
J 0.015 0.025
K 0.575 0.655
M 5_ TYP
Q 0.148 0.158
R 0.045 0.055
S 0.025 0.035
U 0.145 0.155
V 0.040 –––
MILLIMETERS
MIN MAX
10.80 11.04
7.50 7.74
2.42 2.66
0.51 0.66
2.93 3.30
2.39 BSC
1.27 2.41
0.39 0.63
14.61 16.63
5_ TYP
3.76 4.01
1.15 1.39
0.64 0.88
3.69 3.93
1.02 –––
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MJE702.PDF ] |
Número de pieza | Descripción | Fabricantes |
MJE700 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | Motorola Semiconductors |
MJE700 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY | ON |
MJE700 | NPN (HIGH DC CURRENT GAIN) | Samsung |
MJE700 | Monolithic Construction With Built-in Base- Emitter Resistors | Fairchild |
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