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기능 Monolithic Construction With Built-in Base- Emitter Resistors
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MJE802 데이터시트, 핀배열, 회로
MJE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC
• Complement to MJE700/701/702/703
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector- Base Voltage
: MJE800/801
: MJE802/803
60
80
VCEO
Collector-Emitter Voltage
: MJE800/801
: MJE802/803
60
80
VEBO
IC
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
5
4
0.1
40
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
Equivalent Circuit
C
B
R1
R1 10k
R2 0.6k
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
: MJE800/801
: MJE802/803
IC = 50mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Collector Cut-off Current
: MJE800/801
: MJE802/803
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain : MJE800/802
: MJE801/803
: ALL DEVICES
Collector-Emitter Saturation Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
Base-Emitter ON Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCB = Rated BVCEO, IE = 0
VCB = Rated BVCEO, IE = 0
TC = 100°C
VBE = 5V, IC = 0
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
IC = 1.5A, IB = 30mA
IC = 2A, IB = 40mA
IC = 4A, IB = 40mA
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
Min. Max. Units
60 V
80 V
100 µA
100 µA
100 µA
500 µA
2 mA
750
750
100
2.5 V
2.8 V
3V
2.5 V
2.5 V
3V
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001




MJE802 pdf, 반도체, 판매, 대치품
TRADEMARKS
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. G

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