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PDF MJE9780 Data sheet ( Hoja de datos )
| Número de pieza | MJE9780 | |
| Descripción | PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE9780/D
Advance Information
PNP Silicon Power Transistor
The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and
CRT monitors, as well as other applications requiring a 150 volt PNP transistor.
Features:
• Standard TO–220AB Package
• Gain Range of 50 – 200 at 500 mAdc/10 volts
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Sustaining Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
Total Power Dissipation (TA = 25°C)
Derate above 25°C
VCEO
VCBO
VEBO
IC
ICM
PD
Total Power Dissipation
Derate above 25°C
PD
Operating and Storage Temperature
TJ, Tstg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
RθJC
RθJA
TL
MJE9780
150
200
6.0
3.0
5.0
2.0
0.016
40
0.32
– 55 to 150
3.12
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Watts
W/°C
°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector–Base Voltage
(IC = 5.0 mAdc)
Emitter–Base Voltage
(IB = 5.0 mAdc)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
* Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%.
VCEO(sus)
VCBO
VEBO
IEBO
ICBO
Min
°
150
200
6.0
—
—
MJE9780*
*Motorola Preferred Device
PNP SILICON POWER
TRANSISTOR
3.0 AMPERES
150 VOLTS
CASE 221A–06
TO–220AB
Typ Max Unit
° Vdc
——
Vdc
——
Vdc
——
µAdc
— 10
µAdc
— 10
(continued)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MJE9780.PDF ] | |
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