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Datasheet MJH16006A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MJH16006A | POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH16006A/D
Designer's
NPN Silicon Power Transistor
1 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited | Motorola Semiconductors | transistor |
2 | MJH16006A | Power Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH16006A/D
Designer's
NPN Silicon Power Transistor
1 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited | ON | transistor |
3 | MJH16006A | Trans GP BJT NPN 500V 8A 3-Pin(3+Tab) SOT-93 | New Jersey Semiconductor | data |
MJH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MJH10012 | POWER TRANSISTORS DARLINGTON NPN SILICON MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ10012/D
NPN Silicon Power Darlington Transistor
The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector–E ON transistor | | |
2 | MJH10012 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJH10012
www.datasheet4u.com
DESCRIPTION ·With TO-3PN package ·High voltage,high current ·DARLINGTON APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications
PINNING PIN 1 2 3 Base Collect SavantIC transistor | | |
3 | MJH10012 | Trans Darlington NPN 400V 10A 3-Pin(3+Tab) TO-218 New Jersey Semiconductor data | | |
4 | MJH11017 | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJH11017
DESCRIPTION ·High DC Current Gain-
: hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.5V(Max)@ Inchange Semiconductor transistor | | |
5 | MJH11017 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 / 200 / 250 VOLTS 150 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH11017/D
MJH10012 (See MJ10012)
Complementary Darlington Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High DC Current Gain @ 10 Adc — hF Motorola Semiconductors transistor | | |
6 | MJH11017 | Complementary Darlington Silicon Power Transistors MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = ON transistor | | |
7 | MJH11017 | Trans Darlington PNP 150V 15A 3-Pin(3+Tab) SOT-93 Rail New Jersey Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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