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PDF MJH6286 Data sheet ( Hoja de datos )
| Número de pieza | MJH6286 | |
| Descripción | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 80 / 100 VOLTS 160 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJH6282/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–speed switching motor control
applications.
• Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,
2N6286, 2N6287
• Rugged RBSOA Characteristics
• Monolithic Construction with Built–in Collector–Emitter Diode
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @
TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
MJH6282
MJH6285
60
60
MJH6283
MJH6286
80
80
5.0
20
40
0.5
MJH6284
MJH6287
100
100
160
1.28
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
RθJC
Max Unit
0.78 _C/W
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
NPN
MJH6282
MJH6283*
MJH6284*
PNP
MJH6285
MJH6286*
MJH6287*
*Motorola Preferred Device
DARLINGTON
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
CASE 340D–01
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
PACKAGE DIMENSIONS
C
B QE
U4
SL
K
1 23
A
V
G
DJ
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
A 19.00 19.60
B 14.00 14.50
C 4.20 4.70
D 1.00 1.30
E 1.45 1.65
G 5.21 5.72
H 2.60 3.00
J 0.40 0.60
K 28.50 32.00
L 14.70 15.30
Q 4.00 4.25
S 17.50 18.10
U 3.40 3.80
V 1.50 2.00
INCHES
MIN MAX
0.749 0.771
0.551 0.570
0.165 0.185
0.040 0.051
0.058 0.064
0.206 0.225
0.103 0.118
0.016 0.023
1.123 1.259
0.579 0.602
0.158 0.167
0.689 0.712
0.134 0.149
0.060 0.078
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 340D–01
ISSUE A
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJH6286.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MJH6282 | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 80 / 100 VOLTS 160 WATTS | Motorola Semiconductors |
| MJH6283 | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 80 / 100 VOLTS 160 WATTS | Motorola Semiconductors |
| MJH6284 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |  ON |
| MJH6284 | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 80 / 100 VOLTS 160 WATTS | Motorola Semiconductors |
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