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PDF MJL1302 Data sheet ( Hoja de datos )
| Número de pieza | MJL1302 | |
| Descripción | COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | ON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Complementary NPN-PNP
Silicon Power Bipolar Transistor
The MJL3281A and MJL1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
• Designed for 100 W Audio Frequency
• Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area — 1 A/100 V @ 1 Second
• High fT — 30 MHz Typical
Order this document
by MJL3281A/D
MJLN3P2N81A*
MJLP1N3P02A*
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
200 WATTS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
CASE 340G–02, STYLE 2
TO–264
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current — Continuous
Collector Current — Peak (1)
VCEO
VCBO
VEBO
VCEX
IC
200
200
7
200
15
25
Vdc
Vdc
Vdc
Vdc
Adc
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
IB 1.5 Adc
PD 200 Watts
1.43 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–āā65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 0.7 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
200
—
Vdc
—
Emitter–Base Voltage
(IE = 100 mAdc, IC = 0)
VEBO
7
—
Vdc
—
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
(continued)
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
1
1 page  
MJL3281A MJL1302A
TYPICAL CHARACTERISTICS
10000
PNP MJL1302A
Cib
10000
NPN MJL3281A
Cib
1000 Cob
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 14. MJL1302A Typical Capacitance
1000
Cob
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 15. MJL3281A Typical Capacitance
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJL1302.PDF ] | |
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