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부품번호 MJL1302A 기능
기능 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
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MJL1302A 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Complementary NPN-PNP
Silicon Power Bipolar Transistor
The MJL3281A and MJL1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
Designed for 100 W Audio Frequency
Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area — 1 A/100 V @ 1 sec
High fT — 30 MHz Typical
Order this document
by MJL3281A/D
MJLN3P2N81A*
MJL1PN3P02A*
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
200 WATTS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage — 1.5 V
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
CASE 340G–02, STYLE 2
TO–264
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
200
200
7
200
15
25
1.5
200
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
RθJC
Max
0.7
Unit
°C/W
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1




MJL1302A pdf, 반도체, 판매, 대치품
MJL3281A
TYPICAL CHARACTERISTICS
1.8
TJ = 25°C
1.6
PNP MJL1302A
1.4
1.2
1
10 11 12 13 14 15 16 17 18 19 20
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Typical Base–Emitter Voltage
NPN MJL3281A
3.2
2.8 TJ = 25°C
2.4
2
1.6
1.2
0.8
0.4
0
02 4 6
8 10 12 14 16 18 20
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Typical Base–Emitter Voltage
20
TJ = 25°C
16 0.8 A
12
PNP MJL1302A
IB = 1 A
0.6 A
0.4 A
0.2 A
8
4
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. Typical Output Characteristics
20
IB = 1 A
0.8 A
16
12
NPN MJL3281A
0.6 A 0.4 A
0.2 A
8
4
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 10. Typical Output Characteristics
100
10
1
250 ms
1s
0.1
1 10 100 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 11. Forward Bias Safe Operating Area (FBSOA)
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 200°C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
4 Motorola Bipolar Power Transistor Device Data

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