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Número de pieza | MJL21194 | |
Descripción | COMPLEMENTARY SILICON POWER TRANSISTORS | |
Fabricantes | ON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MJL21194 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MJL21193 (PNP),
MJL21194 (NPN)
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Power Dissipation @ TC = 25_C
Derate above 25_C
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
250
400
5
400
16
30
5
200
1.43
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to
+ 150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
0.7
Unit
_C/W
http://onsemi.com
16 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING DIAGRAM
123
TO−264
CASE 340G
STYLE 2
MJL2119x
AYYWWG
13
BASE
EMITTER
2 COLLECTOR
x = 3 or 4
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 7
1
ORDERING INFORMATION
Device
Package
Shipping†
MJL21193G
TO−264
(Pb−Free)
25 Units / Rail
MJL21194G
TO−264
(Pb−Free)
25 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJL21193/D
1 page 10000
TC = 25°C
MJL21193 (PNP), MJL21194 (NPN)
10000
Cib TC = 25°C
Cib
1000
Cob
f(test) = 1 MHz)
100
0.1
1.0 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJL21193 Typical Capacitance
1000
f(test) = 1 MHz)
100
0.1 1.0
Cob
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJL21194 Typical Capacitance
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100 1000 10000
FREQUENCY (Hz)
100000
Figure 16. Typical Total Harmonic Distortion
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
+50 V
DUT
0.5 W
0.5 W
DUT
8.0 W
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MJL21194.PDF ] |
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MJL21194 | 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS | Motorola Semiconductors |
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