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PDF MJL3281A Data sheet ( Hoja de datos )
| Número de pieza | MJL3281A | |
| Descripción | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
Complementary NPN-PNP
Silicon Power Bipolar Transistor
• The MJL3281A and MJL1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
• Designed for 100 W Audio Frequency
• Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area — 1 A/100 V @ 1 sec
• High fT — 30 MHz Typical
Order this document
by MJL3281A/D
MJLN3P2N81A*
MJL1PN3P02A*
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
200 WATTS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage — 1.5 V
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
CASE 340G–02, STYLE 2
TO–264
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
200
200
7
200
15
25
1.5
200
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
RθJC
Max
0.7
Unit
°C/W
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
PACKAGE DIMENSIONS
MJL3281A
–B–
N
R
–Y–
123
0.25 (0.010) M T B M
–Q–
U
–T–
C
E
A
L
P
K
F 2 PL
W
G
D 3 PL
0.25 (0.010) M Y Q S
J
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 2.8 2.9 1.102 1.142
B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
G 5.45 BSC
0.215 BSC
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.0 11.4 0.433 0.449
N 3.95 4.75 0.156 0.187
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.15 2.35 0.085 0.093
U 6.1 6.5 0.240 0.256
W 2.8 3.2 0.110 0.125
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 340G–02
TO–264
ISSUE E
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJL3281A.PDF ] | |
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