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부품번호 | MJW16010 기능 |
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기능 | NPN SILICON POWER TRANSISTORS | ||
제조업체 | ON | ||
로고 | |||
전체 10 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16010/D
MJ16010
™Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications. The MJ16012 and MJW16012 are selected
high gain versions of the MJ16010 and MJW16010 for applications where drive
current is limited.
• Switching Regulators
• Fast Turn–Off Times — TC = 100°C
• Inverters
50 ns Inductive Fall Time (Typ)
• Solenoids
90 ns Inductive Crossover Time (Typ)
• Relay Drivers
800 ns Inductive Storage Time (Typ)
• Motor Controls
• 100_C Performance Specified for:
• Deflection Circuits
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
MJ16010 MJW16010
Symbol MJ16012 MJW16012 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
VCEO
VCEV
VEB
IC
ICM
IB
IBM
PD
450
850
6.0
15
20
10
15
1 75 135
100 53 8
1.0 1.11
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg – 65 to 200 – 55 to 150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering
TL
Purposes, 1/8″ from Case for
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv w(1) Pulse Test: Pulse Width 50 µs, Duty Cycle 10%
1.0 0.93
275
_C/W
_C
MJW16010
MJ16012*
MJW16012*
*Motorola Preferred Device
15 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
135 AND 175 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ16010
MJ16012
CASE 340F–03
TO–247AE
MJW16010
MJW16012
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
MJ16010 MJW16010 MJ16012 MJW16012
TYPICAL STATIC CHARACTERISTICS
50
TC = 100°C
25°C
20
10
5.0
3.0
0.2
VCE = 5.0 V
0.5 1.0 2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain
20
2.0
1.0 15 A
0.7 10 A
0.5
0.3
IC = 1.0 A
0.2
5.0 A
TC = 25°C
0.1
0.02 0.05 0.1 0.2
0.5 1.0 2.0
IB, BASE CURRENT (AMPS)
5.0 10
Figure 2. Collector Saturation Region
5.0
3.0
2.0
1.0 βf = 10
0.7 TC = 100°C
0.5
βf = 10
0.3 TC = 25°C
0.2
0.1
0.07
0.05
0.15 0.2 0.3
βf = 5.0
TC = 25°C
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
15
Figure 3. Collector–Emitter Saturation Voltage
1.5
βf = 10
1.0
0.7 TC = 25°C
75°C
0.5 100°C
0.4
0.3
0.2
0.15
0.15 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 15
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base–Emitter Voltage
104
103
102
101
100
10–1
– 0.4
TJ = 150°C
125°C
100°C
75°C
REVERSE
FORWARD
VCE = 250 V
25°C
– 0.2 0 + 0.2 + 0.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
+ 0.6
10000
5000
3000
2000
1000
500
300
200
100
50
20
10
0.1
Cib
Cob
TC = 25°C
0.3 0.5 1.0 2.0 5.0 10 20 30 50 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
300500 850
4 Motorola Bipolar Power Transistor Device Data
4페이지 1.0
RθJC(t) = r(t) RθJC
RθJC = 1.0°C/W or 1.11°C/W
TJ(pk) – TC = P(pk) RθJC(t)
0.1
MJ16010 MJW16010 MJ16012 MJW16012
0.01
0.01
0.1
100
80
1.0 10
t, TIME (ms)
Figure 17. Thermal Response
SECOND BREAKDOWN DERATING
100
1K
60
40 THERMAL DERATING
H.P. 214
or
EQUIV.
P.G.
*IB
RB = 10 Ω
50
Vin
0V
≈ 11 V
tr ≤ 15 ns
*Tektronix AM503
*P6302 or Equivalent
20 MJW16010, MJW16012
MJ16010, MJ16012
0
0 40 80 120 160 200
TC, CASE TEMPERATURE (°C)
Figure 18. Power Derating
Table 1. Resistive Load Switching
td and tr
0V
*IC
T.U.T.
RL
VCC
≈ – 35 V
H.P. 214
or
EQUIV.
P.G.
5
0
ts and tf
100
20
+
– 10 µF
0.02 µF
0.02 µF
500 1.0 µF 100
VCC = 250 Vdc
RL = 25 Ω
IC = 10 Adc
IB = 1.0 Adc
+V
0V
–5 V
A
50 *IB
T.U.T.
*IC
+ Vdc ≈ 11 Vdc
2N6191
RB1
RB2
2N5337
A
–V
RL
VCC
VCC = 250 Vdc
RL = 25 Ω
IC = 10 Adc
IB1 = 1.0 Adc
RB1 = 10 Ω
IB2 = 2.0 Adc
RB2 = 1.6 Ω
For VBE(off) = 5.0 V, RB2 = 0 Ω
Note: Adjust – V to obtain desired VBE(off) at Point A.
Motorola Bipolar Power Transistor Device Data
7
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부품번호 | 상세설명 및 기능 | 제조사 |
MJW16010 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS | Motorola Semiconductors |
MJW16010 | NPN SILICON POWER TRANSISTORS | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |