Datasheet.kr   

MJW16010 데이터시트 PDF




ON에서 제조한 전자 부품 MJW16010은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 MJW16010 자료 제공

부품번호 MJW16010 기능
기능 NPN SILICON POWER TRANSISTORS
제조업체 ON
로고 ON 로고


MJW16010 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 10 페이지수

미리보기를 사용할 수 없습니다

MJW16010 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16010/D
MJ16010
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications. The MJ16012 and MJW16012 are selected
high gain versions of the MJ16010 and MJW16010 for applications where drive
current is limited.
Switching Regulators
Fast Turn–Off Times — TC = 100°C
Inverters
50 ns Inductive Fall Time (Typ)
Solenoids
90 ns Inductive Crossover Time (Typ)
Relay Drivers
800 ns Inductive Storage Time (Typ)
Motor Controls
100_C Performance Specified for:
Deflection Circuits
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
MJ16010 MJW16010
Symbol MJ16012 MJW16012 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
VCEO
VCEV
VEB
IC
ICM
IB
IBM
PD
450
850
6.0
15
20
10
15
1 75 135
100 53 8
1.0 1.11
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg – 65 to 200 – 55 to 150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering
TL
Purposes, 1/8from Case for
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv w(1) Pulse Test: Pulse Width 50 µs, Duty Cycle 10%
1.0 0.93
275
_C/W
_C
MJW16010
MJ16012*
MJW16012*
*Motorola Preferred Device
15 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
135 AND 175 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ16010
MJ16012
CASE 340F–03
TO–247AE
MJW16010
MJW16012
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1




MJW16010 pdf, 반도체, 판매, 대치품
MJ16010 MJW16010 MJ16012 MJW16012
TYPICAL STATIC CHARACTERISTICS
50
TC = 100°C
25°C
20
10
5.0
3.0
0.2
VCE = 5.0 V
0.5 1.0 2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain
20
2.0
1.0 15 A
0.7 10 A
0.5
0.3
IC = 1.0 A
0.2
5.0 A
TC = 25°C
0.1
0.02 0.05 0.1 0.2
0.5 1.0 2.0
IB, BASE CURRENT (AMPS)
5.0 10
Figure 2. Collector Saturation Region
5.0
3.0
2.0
1.0 βf = 10
0.7 TC = 100°C
0.5
βf = 10
0.3 TC = 25°C
0.2
0.1
0.07
0.05
0.15 0.2 0.3
βf = 5.0
TC = 25°C
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
15
Figure 3. Collector–Emitter Saturation Voltage
1.5
βf = 10
1.0
0.7 TC = 25°C
75°C
0.5 100°C
0.4
0.3
0.2
0.15
0.15 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 15
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base–Emitter Voltage
104
103
102
101
100
10–1
– 0.4
TJ = 150°C
125°C
100°C
75°C
REVERSE
FORWARD
VCE = 250 V
25°C
– 0.2 0 + 0.2 + 0.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
+ 0.6
10000
5000
3000
2000
1000
500
300
200
100
50
20
10
0.1
Cib
Cob
TC = 25°C
0.3 0.5 1.0 2.0 5.0 10 20 30 50 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
300500 850
4 Motorola Bipolar Power Transistor Device Data

4페이지










MJW16010 전자부품, 판매, 대치품
1.0
RθJC(t) = r(t) RθJC
RθJC = 1.0°C/W or 1.11°C/W
TJ(pk) – TC = P(pk) RθJC(t)
0.1
MJ16010 MJW16010 MJ16012 MJW16012
0.01
0.01
0.1
100
80
1.0 10
t, TIME (ms)
Figure 17. Thermal Response
SECOND BREAKDOWN DERATING
100
1K
60
40 THERMAL DERATING
H.P. 214
or
EQUIV.
P.G.
*IB
RB = 10
50
Vin
0V
11 V
tr 15 ns
*Tektronix AM503
*P6302 or Equivalent
20 MJW16010, MJW16012
MJ16010, MJ16012
0
0 40 80 120 160 200
TC, CASE TEMPERATURE (°C)
Figure 18. Power Derating
Table 1. Resistive Load Switching
td and tr
0V
*IC
T.U.T.
RL
VCC
– 35 V
H.P. 214
or
EQUIV.
P.G.
5
0
ts and tf
100
20
+
10 µF
0.02 µF
0.02 µF
500 1.0 µF 100
VCC = 250 Vdc
RL = 25
IC = 10 Adc
IB = 1.0 Adc
+V
0V
–5 V
A
50 *IB
T.U.T.
*IC
+ Vdc 11 Vdc
2N6191
RB1
RB2
2N5337
A
–V
RL
VCC
VCC = 250 Vdc
RL = 25
IC = 10 Adc
IB1 = 1.0 Adc
RB1 = 10
IB2 = 2.0 Adc
RB2 = 1.6
For VBE(off) = 5.0 V, RB2 = 0
Note: Adjust – V to obtain desired VBE(off) at Point A.
Motorola Bipolar Power Transistor Device Data
7

7페이지


구       성 총 10 페이지수
다운로드[ MJW16010.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MJW16010

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

Motorola Semiconductors
Motorola Semiconductors
MJW16010

NPN SILICON POWER TRANSISTORS

ON
ON

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵